不同基板上沉積氮化鋁薄膜之特性研究

Characteristics Analysis of Aluminum Nitride (AlN) Thin Film Deposited on Different Substrates by RF magnetron Sputtering

王昱崴(Yu-Wei Wang)

指導教授 ： 陳至信

中原大學/電機資訊學院/電子工程研究所/碩士(2019年)

https://doi.org/10.6840/cycu201900581

摘要

本論文使用反應性射頻磁控濺鍍法，在藍寶石和矽基板上，藉由不同氬:氮氣比例，及緩衝層，改善矽基板與氮化鋁(AlN)之間的晶格不匹配度，沉積氮化鋁(AlN)薄膜，分析氮化鋁的結晶性及光學性質。
氮化鋁薄膜經由X光繞射分析，樣品的結晶面向及結晶品質，XRD分析不同氣體比例，及緩衝層上沉積的氮化鋁(AlN)，在不同的基板上，接為c軸從優取向的氮化鋁薄膜，在藍寶石基板上的ω scan的半高寬，由氣體比例1:1的1.12°，降至氣體比例0:1的 0.18° ； 矽基板上沉積的氮化鋁薄膜，由於晶格不匹配度較高，半高寬值，隨著氮氣比例升高，由 2.5° 降至 2.3°，並無明顯變化，在二硫化鎢緩衝層上的氮化鋁(0002)薄膜的半高寬值僅有0.36°，比起直接成長在矽基板上明顯下降。光學部分，在氬:氮氣比例1:1的製程條件下，光波長550nm處的折射係數約為2.08，隨著氮氣比例的增加，折射係數開始下降，直到純氮氣濺鍍時，降到2.05；消光係數在氬:氮氣比1:1的條件時是10¬-4，當氬:氮氣比上升至0:1的條件時，消光係數增加至10-3。
使用二硫化鎢緩衝層及純氮製程，可以有效的改善氮化鋁薄膜的品質。

關鍵字

射頻濺鍍 ； 單晶氮化鋁 ； 二硫化鎢

並列摘要

In this thesie, AlN thin film was grown on Sapphire, Si(111) and Si(100) with WS2 buffer layer in different ratios of argon and nitrogen by reactive RF magnetron sputtering system and analyzed the quality and optical properties of the AlN thin films.
From XRD θ-2θ scan, we can observe preferred orientation of AlN(0002), ω scan shows that the Full-Width at Half Maximum(FWHM) of AlN(0002) using 100% nitrogen sputtering is only 0.18∘is much better than sputtering with argon and nitrogen mixed, on Si(111) substrate there is not much different on FWHM of ω scan with different ratios of gas due to the lattice mismatch and the ω scan FWHM of AlN deposited on Si(100) with WS¬2 buffer layer is under 0.5∘, this result is significant differences compared with AlN films on Si(100) without buffer layer.
From the φ scan, we can clearly observe the single crystalline result of AlN deposited by 100% nitrogen sputtering on sapphire.
The optical constant of AlN have been measured by Spectroscopic ellipsometer (SE). From the result of refractive index and extinction coefficient, we can observe the AlN deposited on Si(111) substrate is affected by the ratio of nitrogen and argon, when the ratio of argon and nitrogen is 1:1, the refractive index and extinction coefficient are 2.08 and 10-4 at the wavelength of 633nm, when the ratio of nitrogen increasing refractive index will decrease to 2.05 and extinction coefficient will increase to 10-3, and There is no such situation on the sapphire substrate.

並列關鍵字

RF Sputtering ； single crystalline AlN ； WS2

參考文獻

第6章 參考文獻

【01】C.Morosanu, T. A .Stoica, T.F.Stoica, D.Necsoiu and M.Popescu, “Optical, Electrical and structural properties of AlN thin films”, Semiconductor Conference, 1995.

【02】S.W. Chen, H.F. Lin, T.T. Sung, J.D. Wu, H.L. Kao and J.S. Chen, “Synthesis and SAW characteristics of AlN thin films fabricated on Si and GaN using helicon sputtering system”, Electronics Letters 13th Vol. 39 No. 23, November 2003.

【03】Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi, Jun Norimatsu, Takayoshi Takano, Kenji Tsubaki and Norihiko Kamata, “222–282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire”, Phys. Status Solidi A 206, No. 6, 1176–1182 2009

【04】J. F. MUTH, J. D. BROWN, M. A. L. JOHNSON, ZHONGHAI YU, R. M. KOLBAS, J. W. COOK, JR .and J. F. SCHETZINA, “Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys”, MRS Internet J. Nitride Semicond. Res. 4S1, G5.2 ,1999