ITO 透明導電膜玻璃的製程良率改善之研究

本技術報告在討論氧化銦錫(Indium Tin Oxide，ITO)透明導電膜玻璃的製程良率優化。透明導電膜第一個應用是在國防科技上，於第二次世界大戰時，在轟炸機的座艙罩上鍍了一層氧化錫 (SnO2)透明導電薄膜以作為導電加熱除霧使用，除霧座艙罩能使戰機順利在高空環境中進行轟炸任務，因此當時透明導電膜被列為極高機密，直至戰後才慢慢的開始應用在民生用品中。　　氧化銦錫(ITO)透明導電膜為目前主要所應用的材料，除了氧化銦錫(ITO)透明導電膜本身具有易光蝕刻加工、低電阻特性以及高穿透率等優點外，其製程簡單、製程技術成熟、良率高更是各光電產業能陸續推陳出新的主要原因，也是光電產業市場上製程的主流。　　磁控濺鍍 ITO 透明導電膜玻璃製程發展至今，發展技術已非常的成熟。本技術報告主要討論的重點為，如何讓 ITO 透明導電膜製程良率再提升。透過廠內良率 Defect loss 分析，統整出主要造成產品 Defect loss 的原因，確認為 ITO 膜殘留(T-ITO-Residue)異常。針對該 ITO 膜殘留(T-ITOResidue)異常進行製程流程分析，並設立良率改善必達的挑戰目標，以提高 ITO 透明導電膜製程良率，並降低因 Defect loss 造成產品良率不佳品的報廢數量，來節省公司生產成本。

關鍵字

氧化銦錫；透明導電膜；磁控濺鍍； ITO 膜殘留

並列摘要

In this technical report, we have discussed the yield optimization for the process of the Indium Tin Oxide (ITO) transparent conductive film glass. The first application of the transparent conductive film was used in the aircraft canopy as a technology for the defense purpose. During the World War II, a transparent conductive film of the tin oxide (SnO2) was film-plated onto the canopy of the bomber’s cockpit as a conductive heating demisting. This defogging cockpit canopy makes the fighters successfully carry out bombing missions in high-altitude environments, so the transparent conductive film was classified as a very high secret at that time. It was gradually applied in daily necessities after the World War II. 　　Indium tin oxide (ITO) transparent conductive film is currently the main material used. In other words, it is one of the indispensable materials in the optoelectronic industry. Armed with the properties of a high penetration rate and a low resistivity, the ITO transparent conductive film is also with an easy manufacturing process, a mature manufacturing technology, and a high yield rate. This is the main reason why the optoelectronic industries can develop new transparent conductive films through critical assimilation of the old ones. 　　The development of the magnetron sputtering ITO transparent conductive film process has last for more than 20 years, whose technologies have become very mature. The main focus of this technical report lies in how to improve the yield of the ITO transparent conductive film process. Through the factory yield Defect Loss analyses, the main reason of the product Defect Loss is due to the abnormal ITO film residue (T-ITO-Residue). Furthermore, the process flow analyses have been also carried out for the abnormal ITO film residue (T-ITO-Residue). As a result, the challenge goal of the setup for the yield improvement must be done for improving the yield of the ITO transparent conductive film process, reducing the number of defects due to defect loss, and curtailing the company's production costs.