V90與IP3650兩種光阻對光碟模仁微結構與粗糙度之研究

The Study on the Micro-structure and Surface Roughness of the Stamper between V90 and IP3650 Photoresist Exposing Process

蘇昱豪(Yuh-Hao Su)

指導教授 ： 陳夏宗

中原大學/工學院/光機電及資電控產業研發碩士專班/碩士(2008年)

https://doi.org/10.6840/CYCU.2008.00400

摘要

隨著光電儲存媒體的興起，帶動著光碟需求量大增，然而光碟模仁在光碟片製程中占有很重要的地位，光碟片是經由：刻版、顯影、電鑄，產生微結構模仁，再經射出機射出成型碟片，因此模仁的製程品質與微結構成型條件將是光碟片良率的最大關鍵。
本研究是針對光碟微結構模仁的各項製程中，找出影響光碟模仁微結構與粗糙度的最佳各項參數，實驗中分別比較V90與IP3650兩種光阻劑在控制光阻塗佈厚度、顯影濃度、顯影時間與離子清洗時間，探討其改變各項製程參數對微結構成型與粗糙度的影響。實驗以雷射刻版機對光阻進行曝光，經顯影製程將光阻顯像出來，再利用微電鑄製程生成金屬模仁，以原子力顯微鏡進行微結構與粗糙度分析。
研究結果顯示，V90光阻劑在顯影製程中，顯影液濃度增加至90%時，顯影液會對未曝光之光阻進行反應，微結構深度由29nm左右降至27nm左右，顯示顯影液濃度過高會對此光阻劑在未曝光時產生反應，因而造成微結構成型失真；IP3650光阻劑在光阻膜厚製程中，在相同雷射刻版功率下，光阻膜厚從25nm~40nm，其微結構寬度皆維持297nm~308nm左右變化不大，顯示此光阻25nm~40nm之間的膜厚下，只需同樣刻版功率即可產生相同寬度，明顯對光的反應較V90靈敏。兩種光阻劑在各組實驗組合中，發現光阻膜厚設定在30nm左右，顯影濃度設定在85%左右，顯影時間設定在30秒左右，離子清洗時間設定在90秒左右，在各組實驗交叉分析後會有最佳的微結構成型與粗糙度。

關鍵字

微結構 ； 離子清洗 ； 顯影

並列摘要

As the growing up of optic-storage media forced the increasing demand of the optic-disc, the importance of the stampers in the optic-disc manufacturing process is getting more significant. The key point of the optic-disc yield and quality will surely depend on the process quality and micro-structure of the stamper.
This study is focused on the optimum parameters study of the stamper making process. The two different photoresists, V90 and Ip3650, have been compared in the coating thickness, developing concentration, developing time, and ashing time. Discussing the affection of the variation among these different parameters.
The result indicates that in the developing process of V90, the developing solution will react with the non-exposed resist when the concentration of developing solution increased to 90%. The depth of groove decreased from 29nm to 27nm. The distortion of the geometry occurred when higher concentration of developing solution team up with the V90 photoresist. Further, according to the IP3650 with the same laser power, the groove widths maintain small variation between 297nm and 308nm while the thickness of the photoresist variate from 25nm to 40nm. The IP3650 shows a higher sensitivity to specific laser while compare with the V90.
The best parameters to get the optimum geometry and roughness of the stamper surface after the crosswise analysis of both photoresist been made shall be as following: the thickness of the photoresist been set at 30nm, the concentration of the developing solution been set at 85%, the developing time been set at 30 seconds, the ashing time been set at 90 seconds.

並列關鍵字

plasma ； Micro-structure ； development

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