- 學位論文
以射頻磁控濺鍍法沉積IGZO薄膜之特性研究
The Characteristic study of IGZO thin film using RF magnetron sputtering system
摘要
近年來平面顯示器產品尺寸愈來愈大、解析度愈來愈高且具備可撓式特性便於攜帶的需求也愈來愈大，因此要求薄膜電晶體能有高載子遷移率、高開關電流比、均勻性佳及可相容於低溫製程等特性。然而，薄膜電晶體的通道層材料從非晶矽到多晶矽都無法符合現況需求。近年日本Hideo Hosono教授的團隊已發展出非晶氧化物-氧化銦鎵鋅(IGZO)，IGZO具有高穿透率且在室溫下可成長成非晶結構，因為無晶粒邊界問題，適合大面積生產，而在元件應用方面則可藉由改變摻雜In和Ga原子而改變其電性。 本論文利用射頻磁控濺鍍系統以in-situ方式分別於ZnO/glass和ZnO/Si(111)基板上沉積IGZO薄膜。藉由XRD和TEM結構分析，發現在室溫下以不同氧氣比例條件所成長之IGZO薄膜皆為非晶結構。利用AES分析薄膜組成成份，則可知In：Ga：Zn：O之相對原子濃度比約為1：1.3：0.5：4。薄膜電性部分，由霍爾量測得知以氧氣比例0%所成長之IGZO薄膜電阻率為1.437×10-1 Ω-cm，載子濃度為6.72 ×1018 cm-3，遷移率為6.724 cm2V-1s-1。為了提升IGZO薄膜之載子遷移率，使用高溫爐管將薄膜以400℃退火1小時；於退火實驗中，發現載子遷移率會隨氧氣比例提高而降低。
並列摘要
Recently, the demands for the flat panel displays with higher resolution, higher flexibility and larger size are increasing. Therefore, the thin film transistors with high carrier mobility, high on/off current ratio, good uniformity and low process temperature are strongly needed. However, the amorphous silicon and poly-silicon, employed as the active layer, are still far below the criteria of the thin film transistors. Hideo Hosono group has already fabricated the amorphous oxide-Indium Gallium Zinc Oxide (IGZO) at room temperature. The amorphous IGZO thin films of high transmittance, but with no grain boundary problem, can be applied to the fabrication of the large-scale display. In addition, the electrical property of IGZO can be controlled by the doping of Indium and Gallium. In this study, IGZO films were grown in-situ on ZnO/glass and ZnO/Si(111) at room temperature using RF magnetron sputtering. The amorphous structure of IGZO films deposited at various oxygen concentrations was investigated with XRD and TEM. The composition analysis of IGZO was carried out by AES. The ratio of atomic concentrations of In, Ga, Zn, and O is 1: 1.3: 0.5: 4. The Hall measurement of IGZO grown at the oxygen concentration of 0% shows that the film resistivity, carrier concentration and carrier mobility are 1.437×10-1 Ω-cm, 6.72×1018 cm-3 and 6.724 cm2 V-1s-1, respectively. In order to enhance the carrier mobility of IGZO, the films were annealed at 400℃ for one hour. The result shows that the carrier mobility decreases with increasing oxygen concentration.
參考文獻
延伸閱讀
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