雙閘極離子感測多晶矽薄膜電晶體之研究

Study on Double-Gate Ion-Sensitive Poly-Si TFTs

陳雋容(Jun-Rong Chen)

指導教授 ： 陳建亨

國立暨南國際大學/科技學院/電機工程學系/碩士(2021年)

https://doi.org/10.6837/ncnu202100210

摘要

本論文製作雙閘極離子感測多晶矽薄膜電晶體，利用上下閘極間之電容耦合效應，使靈敏度得以大幅提升；除此之外，亦藉由不同厚度之主動層，測試其對感測特性方面之影響。
結果顯示，主動層厚度 50 奈米元件之單雙閘極靈敏度分別為 -55.5 mV⁄pH 及 -319 mV⁄pH，放大係數為5.8、厚度 100 奈米元件則分別為 -56.8 mV⁄pH 及 -294 mV⁄pH，放大係數為5.2；主動層厚度對元件額外的影響則是，較厚者較為穩定，而較薄者有較高之放大係數。
結論而言，以 APTES/SiO_2 堆疊式感測薄膜製作之雙閘極多晶矽離子感測薄膜鍵晶體，有著優異的感測特性，未來可應用於生物感測領域，製作一高性能之量測系統電路。

關鍵字

生物感測器 ； 雙閘極離子感測電晶體 ； 多晶矽薄膜電晶體

並列摘要

In this study, we developed a double-gate ion-sensitive poly-Si TFT. Utilizing the capacitance coupling effect, the sensitivity can be amplified considerably. Besides, by altering the thickness of active layer, the sensing characteristic and reliability were also tested.
As a result, the devices with active layer thickness of 50 nm have the sensitivity of -55.5 mV⁄pH and -319 mV⁄pH in single gate (SG) and double gate (DG) mode, respectively, i.e. an amplifying factor (AF) of 5.8. And correspond to the device with active layer thickness of 100 nm, is -56.8 mV⁄pH, -294 mV⁄pH and 5.2, respectively. In addition, the devices with thicker active layer are more stable and the thinners have lager AF.
In conclusion, the double-gate ion-sensitive poly-Si TFTs with APTES/SiO_2 stacked sensing membrane has a excellent sensing property and can be used in the future as biosensor to manufacture a high performance measuring system

並列關鍵字

biosensors ； DG ISFETs ； poly-Si TFTs.

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