具高介電金屬閘極之雙閘極多晶矽離子感測電晶體研究

Study on Dual-Gate Poly-Si Ion-Sensitive Field-Effect Transistors with High-K Metal Gate

謝辰皓(Chen-Hao Hsieh)

指導教授 ： 陳建亨

國立暨南國際大學/科技學院/電機工程學系/碩士(2022年)

https://doi.org/10.6837/ncnu202200052

摘要

本論文製作一高介電金屬閘極之雙閘極電晶體傳感器，採用延伸式閘極，銜接二氧化矽感測薄膜，電晶體傳感器之上閘極採用Al2O3 / HfO2/SiO2 堆疊式介電層，並利用雙閘極電容耦合效應，製作出可拋式高靈敏度之延伸式酸鹼感測器。
研究結果顯示，本架構可提升酸鹼感測器靈敏度，單閘極靈敏度為12.1 (mV/pH)，雙閘極靈敏度為202 (mV/pH)，靈敏度提升達16.7倍，未來將可以運用在生化感測器之應用上。

關鍵字

生物感測器 ； 雙閘極多晶矽薄膜電晶體

並列摘要

In this work, the dual-gate poly-Si ion-sensitive field-effect transistors with high-k metal gate were fabricated. The Al2O3 / HfO2/SiO2 stack thin film was deposited as the top-gate dielectric for the transistors. The extending-gate was connected to the SiO2 sensing membrane. The dual-gate coupling effect was used to fabricated a disposable high sensitivity extended pH sensor.
For the results, the sensitivity of proposed pH sensor can be improved successfully. The sensitivity of the dual-gate pH sensor was about ~202 (mv/pH); while it was about ~12.1 (mv/pH) for the single-gate one. The amplification factor (AF) was about 16.7. This technique can be suitable for the future bio-chemical sensing applications.

並列關鍵字

biosensors ； Dual-Gate Poly-Si TFTs

參考文獻

參考文獻

P. Bergveld, "Development of an ion-sensitive solid-state device for neurophysiological measurements", IEEE Trans. Biomed. Eng. BME-17, 70–71

武世香、虞惇、王貴華，”化學量感測器，感測器技術”，第 1 期 (1990) 57 〜62。

B. D. Liu, Y. K. Su, and S. C. Chen, “Ion-sensitive field-effect transistor with silicon nitride gate for pH sensing,” International Journal of Electronics, vol. 67, no. 1, pp. 59-63, 1989/07/01, 1989.

J. van der spiegel, I. Lauks, P. Chan, and D. Babic, “The extended gate chemically sensitive field effect transistor as multi-species microprobe,” Sensors and Actuators, vol. 4, pp. 291-298, 1983/01/01/, 1983.