採用基於反相器之RF轉導級及基於負電阻補償的核心IF負載技術
的94 GHz 降頻混波器

本論文主要以台積電90奈米CMOS製程來實現94GHz降頻混波器設計。共研究二種電路架構: 第一部份為94GHz降頻混波器，在第一部份所使用的電路架構進行修改，在原有的inverter電路上再將雙平衡式吉伯特電路的電阻改成PMOS negative resistance compensation技術，使其能夠提升轉換增益，降低功率損耗。第二部分也是94GHz降頻混波器，使用Ultra Low Power Diode(ULPD) 架構，這個架構跟一般電路架構的電阻相比，可以減少電流輸入，進而使消耗功率減少。第三部分是180GHz降頻混波器，使用Ultra Low Power Diode(ULPD) 和負電組補償架構，ULPD架構跟一般電路架構的電阻相比，可以減少電流輸入，進而使消耗功率減少，負電組補償能夠提升轉換增益。最後部分為結論。

關鍵字

降頻混波器；吉伯特； MarchandBalun ；轉換增益；負電阻補償；源極隨耦器；反相器

並列摘要

This thesis mainly use a standard TSMC 90 nm CMOS process to implement 94GHz down conversion mixers. This thesis research three kind of a circuit structure: The first architecture is a 94GHz down conversion mixer. This circuit reform the first architecture by the original inverter circuit and change double-balanced Gilbert circuit resistance into PMOS negative resistance compensation technology for raising conversion gain and compressing power consumption. The second is also a 94GHz down conversion mixer using the Ultra Low Power Diode (ULPD) architecture, which reduces current input compared to the resistance of a typical circuit architecture, resulting in reduced power consumption. The third is a 180GHz down conversion mixer using an Ultra Low Power Diode (ULPD) and a negative resistance compensation architecture. The ULPD architecture reduces current consumption compared to typical circuit architectures, resulting in reduced power consumption, and negative resistance compensation architecture Can improve conversion gain. The last part is conclusion.