G頻帶雙推式CMOS壓控振盪器之設計及實現

Design and Implementation of G-band Push-Push CMOS VCO

陳靖勇(Jing-Yong Chen)

指導教授 ： 林佑昇

國立暨南國際大學/科技學院/電機工程學系/碩士(2017年)

摘要

本論文使用台積電90奈米CMOS製程元件設計與實現壓控振盪器以作為在W頻帶及G頻帶的無線通訊系統之應用。此論文的研究主題分成三部分：
第一部分是一個以90奈米製程實現雙頻帶壓控振盪器，加入LC源級退化及四分之一波長傳輸線的雙推式架構使電路操作在W頻帶及G頻帶。此壓控震盪器震盪頻率為100.3 GHz，調諧範圍1.86 GHz，輸出功率-3.71 dBm，相位雜訊在10 MHz的時候是-108.54 dBc/Hz。在二倍頻的震盪頻率為200.6 GHz，調諧範圍3.88 GHz，輸出功率-14.64 dBm，相位雜訊在10 MHz的時候是-102.52 dBc/Hz。
第二部分是改良第一部分的壓控震盪器，特色是加入兩顆二極體與交叉耦合對的NMOS並聯。此壓控震盪器震盪頻率為99.44 GHz，調諧範圍2.01 GHz，輸出功率-5.05 dBm，相位雜訊在10 MHz的時候是-109.67 dBc/Hz。在二倍頻的震盪頻率為198.88 GHz，調諧範圍4.02 GHz，輸出功率-11.96 dBm，相位雜訊在10 MHz的時候是-104.41 dBc/Hz。
第三部分是一個以40奈米製程實現雙頻帶壓控震盪器，以第二部分的壓控震盪器來做改良，特色是加入兩顆二極體與交叉耦合對的NMOS並聯，Source端的LC tank由兩個LC組成。此壓控震盪器震盪頻率為172.49 GHz，調諧範圍3.25 GHz，輸出功率-14.78 dBm，相位雜訊在10 MHz的時候是-104.86 dBc/Hz。在二倍頻的震盪頻率為344.99 GHz，調諧範圍6.48 GHz，輸出功率-16.31 dBm，相位雜訊在10 MHz的時候是-98.84 dBc/Hz。

關鍵字

壓控振盪器 ； W頻帶 ； G頻帶 ； Push-Push ； 汽車雷達 ； 氣象雷達

並列摘要

In this paper, the use of TSMC 90nm CMOS process components design and implementation of voltage-controlled oscillator as in the W band and G band wireless communication system applications. The thesis is divided into two parts:
The first part is a 90 nm process to achieve dual-band voltage-controlled oscillator, adding LC source degradation and quarter-wavelength transmission line of the push-push structure of the circuit in the W band and G band. The oscillation frequency is 100.3 GHz, the tuning range is 1.86 GHz, the output power is -3.71 dBm, the phase noise is -108.54 dBc / Hz at 10 MHz. The oscillation frequency at the push-push port is 200.6 GHz, the tuning range is 3.73 GHz, the output power is -14.65 dBm, the phase noise is -102.52 dBc / Hz at 10 MHz.
The second part is to improve the first part of the voltage-controlled oscillator, the feature is to join a diode with a cross-coupled pair of NMOS in parallel. The oscillation frequency of this voltage-controlled oscillator is 99.44 GHz, the tuning range is 2.01 GHz, the output power is -5.05 dBm, the phase noise is -109.67 dBc / Hz at 10 MHz. The oscillation frequency at the second harmonic is 198.88 GHz, the tuning range is 4.02 GHz, the output power is -11.96 dBm, the phase noise is -104.41 dBc / Hz at 10 MHz.
The third part is a 40 nm process to achieve dual-band voltage control oscillator, to the second part of the voltage control oscillator to do improvements, the feature is to join a diode with a cross-coupled pair of NMOS in parallel, the source LC tank consists of two LCs. The oscillation frequency of this voltage-controlled oscillator is 172.49 GHz, the tuning range is 3.25 GHz, the output power is -14.78 dBm, the phase noise is -104.86 dBc / Hz at 10 MHz. The oscillation frequency at the second harmonic is 344.99 GHz, the tuning range is 6.48 GHz, the output power is -16.31 dBm, the phase noise is -98.84 dBc / Hz at 10 MHz.

並列關鍵字

voltage-controlled oscillator (VCO) ； W-band ； G-band ； Push-Push ； automotive radar ； weather radar

參考文獻

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