本論文主要以CMOS製程去實現高頻振盪器,研究主題分成三個部分: 第一部份為Ku頻段電流共用架構壓控震盪器,藉由電流共用的架構來達到降低功率消耗,並以台積電0.18-μm 1P6M的互補式金氧半製程實現。 第二部份為K頻段切換式電容壓控震盪器,使用切換式電容的特性來達到可調頻寬並減小KVCO¬降低對相位雜訊的影響,最後以台積電0.18-μm 1P6M互補式金氧半製程實現。 第三部份為毫米波壓控震盪器,我們呈現了一個Ka 頻段壓控震盪器及60GHz壓控震盪器,其分別採用台積電0.18-μm 1P6M互補式金氧半製程實現低相位雜訊及台積電0.13-μm 1P8M互補式金氧半製程實現低功率消耗。
The thesis mainly use CMOS technology to implement the high-frequency VCO, and the thesis is composed of three topics. The first part is the Ku band current-reused VCO, using current-reused topology to decrease power dissipation. The circuit is implemented in TSMC 0.18-μm one-poly-six-metal (1P6M) CMOS process. The second part is the K band VCO with switched-capacitor, using the switched- capacitor to adjust frequency range, decrease KVCO and reduce phase noise. The circuit is implemented in TSMC 0.18-μm one-poly-six-metal (1P6M) CMOS process. The third part is the millimeter-wave VCO. We proposed a Ka band VCO and a 60 GHz VCO. The Ka band VCO use TSMC 0.18-μm CMOS process to reduce phase noise and the 60 GHz VCO use TSMC 0.13-μm CMOS process to achieve low power consumption.