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  • 學位論文

30-60-GHz CMOS濾波器、可調式二分功率器以及電感間耦合效應之研究

Study of 30-60-GHz CMOS Filter, Tunable Splitters, and Coupling Effects between Inductors

指導教授 : 林佑昇

摘要


本篇論文主要是研究應用於射頻積體電路上之被動元件和被動電路,研究主題分成三個部分: 第一部分探討在矽基板上的偶合電感,並使用環形地來降低偶合效應。 第二部份為應用於接收端超寬頻系統之3.1~10.6 GHz帶通濾波器。主要設計一個利用集總式元件之帶通濾波器,並搭配合成傳輸線。量測結果顯示3 dB頻寬是從3.3-13.7 GHz,最小插入損失為1.93 dB和群速延遲為133±97 ps。 第三部份,我們提出一個利用可變電容和合成傳輸線來實現一個可調相位和振幅差的二分功率器。實驗結果顯示此可調式二分功率器,當VB=0伏特時,在30.4 ~ 40 GHz的頻率範圍內,其反射損失為< -20dB,隔離度為<-20 dB,相位差為90°±2°和振幅差為±0.7 dB。VB=+1.8伏特時,在28 ~ 42.6 GHz的頻率範圍內,其反射損失為< -16dB,隔離度為<-20.8 dB,相位差為90°±2°和振幅差為±1.12 dB。

並列摘要


This thesis is mainly studied the passive device and passive circuit for RFIC applications. Study theme is divided into three parts: The first part is to study coupled inductors on silicon substrate. Use a guard-ring within to diminish the coupling effect. In the second part, 3.1 ~ 10.6 GHz band pass filter is designed for ultra wideband (UWB). Mainly, a kind of band pass filter is designed by lumped device and implemented based on synthetic transmission lines (TLs). Measured results show that the band pass filter has 3dB bandwidth range from 3.3 to 13.7GHz, the minimum insertion loss of 1.93 dB, and group delay of 133±97 ps. In the third part, we propose that the tunable function for phase and amplitude difference in lumped out-of-phase power splitters is implemented by putting varactor into the synthetic TLs. At the VB=0V, within the range of 30.4 ~ 40 GHz, the return loss, isolation, phase difference and amplitude difference are < -20dB, <-20 dB, 90°±2° and ±0.7 dB, respectively. At the VB=+1.8V, within the range of 28 ~ 42.6 GHz, the return loss, isolation, phase difference and amplitude difference are < -16dB, <-20.8 dB, 90°±2° and ±1.12 dB, respectively.

參考文獻


[1] H. C. Chen, T. Wang, and S. S. Lu, "A 5-6 GHz 1-V CMOS Direct-Conversion Receiver With anIntegrated Quadrature Coupler," IEEE Journal of Solid State Circuits, vol. 42, no. 9, pp. 1963-1975,2007.
[2] H. C. Chen, T. Wang, S. S. Lu, and G. W. Huang, "A Monolithic 5.9-GHz CMOS I/Q Direct-DownConverter Utilizing a Quadrature Coupler and Transformer-Coupled Subharmonic Mixers," IEEEMicrowave and Wireless Components Letters, vol. 16, no. 4, pp. 197-199, 2006.
[3] L. E. Larson, "Integrated circuit technology options for RFIC's – present status and future directions," IEEE J. Solid-State Circuits, Vol. 33, No. 3, pp. 387-399, March 1998.
[4] J. N. Burghartz, et al., "RF circuit design aspects of spiral inductors on silicon," IEEE J.Solid-State Circuits, Vol. 33, No. 12, pp. 2028-2034, December 1998.
[5] J. N. Burghartz, et al., "Integrated RF components in a SiGe Bipolar technology," IEEE J. Solid-State Circuits, Vol. 32, No. 9, pp. 1440-1445, September 1997.

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