雙-2,6-[2-(2-氧代二氫吲哚-3-亞基)丙二腈]萘衍生物可於空氣中穩定操作之N型有機場效電晶體

空氣穩定N型有機場效電晶體材料的發展備受關注，原因為空氣穩定N型電晶體能與空氣穩定的P型電晶體結合製作成具有高效能的互補電路。我們將先前所發表文獻中的化合物二氰基亞甲基取代吲哚-2-酮衍生物加以變化，在二聚體之間加入萘增加其共軛長度並具共平面的特性，以設計出能在空氣中穩定的N型半導體材料。我們成功合成出 BIMN-C2C6、BAIMN-C2C6 以及 BAIMN-C10C14，而三者的差異在於苯環上是否有N原子取代C原子以及碳側鏈的長度，本研究中我們對此三種化合物測量熱穩定性、光學性質、電化學性質。為了探討氮原子取代與側鏈長度對於 BIMN 衍生物載子傳遞的影響，我們將材料製作成電晶體，使用上接觸下閘極的方式、並用 PTS 修飾的二氧化矽基板來完成，同時將塗有材料的基板透過原子力顯微鏡與 X-ray 繞射儀來探討分子結構、薄膜形貌與結晶度之間的關係。最後以BAIMN-C10C14所製成的元件其XRD圖顯示結晶性良好，但其AFM圖呈現晶粒間不連續而導致元件效率低，推測在液相製程時需調整溶液濃度或是拖曳速度使半導體層有較好的結晶性與薄膜連續性。

關鍵字

空氣穩定性； N-type材料；有機場效電晶體；液相製程

並列摘要

The development of air-stable n-type organic field-effect transistor (OFET) materials have attracted much attention owing to the necessity to combine them with air-stable p-type OFETs to fabricate organic complementary circuits have high performance. We have changed the previously published derivatives of dicyanomethylene substituted indol-2-one, adding naphthalene between dimers to increase their conjugation length and coplanarity. Design N-type semiconductor materials, which can be stable under ambient conditions. We have successfully synthesized BIMN-C2C6、BAIMN-C2C6 and BAIMN-C10C14, the difference among the three are whether there is an N atom replace the C atom on the benzene ring and the length of the alkyl chain. Then we investigated their thermo-stability, optical properties, electrochemical properties. To study the influence of the nitrogen substituent and alkyl chain on the electron-transporting properties of BIMN derivatives, top-contact bottom-gate OFETs were fabricated on PTS-modified SiO2 substrates. The thin films were characterized by atomic force microscopy (AFM) and X-ray diffraction (XRD) to elucidate the relationships between molecular structure, film morphology and crystallinity. Finally, the XRD spectra of BAIMN-C10C14 based film show good crystallinity, but the AFM image shows discontinuity between grains and the element efficiency is low. It is presumed that the concentration of the solution or the drag speed should be adjusted in the liquid phase process to make the semiconductor layer has good crystallinity and film continuity.