具3-氨丙基三乙氧基矽烷/氧化鋁堆疊感測薄膜之離子感測電晶體研究

Study of ISFETs with APTES/Al2O3 Stacked Sensing Membranes

李俊逸(Chun-Yi Li)

指導教授 ： 陳建亨

國立暨南國際大學/科技學院/電機工程學系/碩士(2019年)

https://doi.org/10.6837/ncnu201900222

摘要

本論文利用對離子有高感測度的Al2O3作為感測薄膜，再利用自主裝單分子層APTES成長於感測薄膜上作為和生物分子產生鍵結的連接物(Linker)，形成APTES/Al2O3堆疊式感測薄膜應用於離子場效電晶體和延伸式閘極電晶體，藉此製作出高感測度的電性轉換元件作為生物感測器之雛形。
在實驗結果方面，我們利用了接觸角量測去探討Al2O3感測薄膜表面處理的較佳的參數以便提升感測薄膜表面和APTES的鍵結。在量測結果方面，具有APTES/Al2O3堆疊式感測薄膜的延伸式閘極電晶體擁有較好的感測度、遲滯和時漂。其中感測薄膜厚度20nm 且成長APTES的EGFET擁有最佳的感測特性。

關鍵字

離子感測場效應電晶體 ； 自組裝單分子層 ； APTES

並列摘要

In this study, Al2O3 was deposited as sensing membranes of ISFETs and EGFETs. Self-assembly monolayers, (3-Aminopropyl)triethoxysilane, APTES, were grown on the sensing membranes as a linker between Al2O3 and biomolecule. ISFETs and EGFETs with APTES/Al2O3 stacked sensing membranes were investigated for high sensitivity transducers in biosensors.
In the results, the contact angle measurement was performed to study the surface properties of Al2O3. The EGFETs with APTES/Al2O3 stacked sensing membranes exhibited higher sensitivity, lower hysteresis, and lower drift comparing to the control samples. The EGFETs with the stacked sensing membranes with the Al2O3 thickness of about ~20 nm exhibited the best performance comparing to others.

並列關鍵字

ISFETs ； SAMs ； APTES

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