奈米多通道離子感應場效應電晶體之研究

The Study of ISFETs with Multiple Nano Channels

陳志昀(Chih-Yun Chen)

指導教授 ： 陳建亨

國立暨南國際大學/科技學院/電機工程學系/碩士(2011年)

摘要

本論文整合了UV奈米壓印技術與傳統離子感應場效應電晶體製程，製作出奈米多通道離子感應場效應電晶體，首先利用UV奈米壓印與反應性離子蝕刻的技術在p-type矽晶片上製作出奈米多通道結構，再進行離子感應場效應電晶體的製作，並藉由Agilent 4156C、4284A量測完成的離子感應場效應電晶體元件來了解多通道結構的改變對於元件特性的影響。
實驗結果顯示，我們已成功製作出線寬/間距約為200nm/200nm之奈米壓印模具，並運用於奈米壓印在矽晶片上製作出線寬/間距約為200nm/200nm的奈米多通道結構，成功地整合奈米壓印技術與傳統離子感應場效應電晶體製程，製作出之奈米多通道離子感應場效應電晶體，且由實驗結果發現，線寬/間距200nm
/200nm的奈米多通道結構的離子感應場效應電晶體，展現出較高的靈敏度，較低的遲滯以及時漂，未來可將運用生醫檢測儀器之應用上。

關鍵字

奈米壓印 ； 離子感應場效應電晶體 ； 多通道

並列摘要

In this thesis, the multiple nano-channel ISFET were fabricated by combing UV nano imprint and conventional photolithography. The multiple nano-channels were fabricated by UV NIL and reactive ion etching. Then, the ISFET were fabricated. The electrical characteristics were measured by 4156C、4284A.
In our results, the mold with the line/space width of about 200/200 nm and the nano-channel with the line/space width of about 200/200 nm were both fabricated successfully. The ISFET with multiple nano-channels shows higher sensitivity, lower hysteresis ,and drift than the single channel one. This technology will be suitable for biomedical applications.

並列關鍵字

nano imprint ； ISFET ； multiple channel.

參考文獻

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