以γ-APTES 為絕緣層之電阻切換記憶體多階電阻切換模型

本論文主旨在針對具金屬/絕緣層/金屬(MIM)結構之可變電阻式記憶體的，研究不同金屬電極及絕緣層材料對其電阻切換特性之影響，觀察在絕緣層中混入3-氨基丙基三乙氧基矽烷(Gamma-aminopropyltriethoxysilane，-APTES)時所產生的多階電阻切換的特性，並解釋其切換的原理。我們在氟化氧化錫(FTO)導電玻璃上蒸鍍(Evoaporation)鋁或鈦做為底電極，以旋塗的方式塗布不同的濃度及厚度之PS、P2VK、PVDF及-APTES等不同的絕緣層材料，在底電極上，再用金屬遮罩蒸鍍鋁或鈦做頂電極，完成之元件再以半導體參數分析儀Agilent-4156C進行電流-電壓(I-V)特性之量測。關鍵詞：有機電阻式記憶體、3-氨基丙基三乙氧基矽烷，多階電阻切換

關鍵字

有機電阻式記憶體； 3-氨基丙基三乙氧基矽烷；多階電阻切換

並列摘要

The main theme of this thesis is to study the resistive switching characteristics of metal-insulator-metal (MIM) structure with different gate electrode and insulator materials. In this work, we also developed a model to describe the multi-level resistive switching in the MIM devices with insulator layers mixed with -aminopropyltriethoxysilane (-APTES). An aluminum (Al) or titanium (Ti) was deposited onto a fluorinated tin oxide (FTO) as the bottom electrode. Various insulator layers including PS、P2VK、PVDF and -APTES were coated onto the substrate separately, by spin coating, then a Al or Ti top electrode were evaporated onto the insulator layer through metal mask by thermal evaporation. The completed devices were then subjected to I-V characteristics measurement by semiconductor parameter analyzer Agilent 4156C. Keywords: organic resistive switching memory; gamma-aminopropyltriethoxysilane, multi-level resistive switching

並列關鍵字

organic resistive switching memory ； gamma-aminopropyltriethoxysilane ； multi-level resistive switching

參考文獻

[1] 黃喻暉，國立暨南國際大學電機工程學系碩士論文，“奈米尺度下HfO2-based 電阻式記憶體輻射後特性研究”，中華民國103年7月。

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