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  • 學位論文

輻射效應對3-氨基丙基三甲基矽氧烷混合聚二甲基矽氧烷處理後 二氧化矽奈米顆粒特性之影響

Radiation Effect on the Characteristics of 3-Aminopropyltriethoxysilane Mixed with Polydimethylsiloxane-treated Silica Nanoparticales

指導教授 : 吳幼麟
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摘要


本論文旨在討論3-氨基丙基三甲氧基甲矽烷(3-aminopropyltriethoxysilane,γ-APTES)與二甲基矽氧烷(PDMS)表面處理之二氧化矽(SiO2)奈米顆粒(Nano particles)混成薄膜在受到60Co Gamma-Ray照射後所產生之輻射效應與輻射後利用紫外光(Ultraviolet)和熱退火處理之研究。 在本論文中,我們利用多晶矽奈米線 (Poly-silicon nanowire)進行薄膜在輻射前、後及退火處理後之感測分析;利用原子力顯微鏡(Atomic Force Microscopy,AFM)觀察薄膜表面形貌變化,並利用傅立葉轉換紅外線光譜儀(Fourier transform infrared spectroscopy,FTIR)進行分子鍵結分析。 由實驗結果我們可以發現γ-Ray輻射照射後,γ-APTES薄膜受到破壞,不論表面形貌或FTIR頻譜皆產生明顯變化,其生醫感測特性也嚴重退化;然而γ-APTES +NPs + UV薄膜,經由輻射後照UV光,我們發現約20分鐘室溫下UV光退火處理,能有效恢復受γ-Ray輻射所造成的破壞;而AFM表面形貌與FTIR的分析亦顯示此回復效應。由於UV光能氧化PDMS,我們相信SiO2奈米顆粒表面受UV光氧化作用的同時能修復由γ-Ray所形成的電荷捕捉缺陷。

並列摘要


This thesis aims at investigating the γ-ray radiation effects in sensing membrane using a mixture of 3-aminopropyltriethoxysilane (γ-APTES) and Polydimethylsiloxane (PDMS) -treated silica (SiO2) nanoparticles (NPs). We also study the post-irradiation annealing effects by using either ultraviolet or thermal treatment. The γ-APTES and γ-APTES/NPs nanocomposite were spin-coated onto polysilicon wires surface for sensing characterization before/after irradiation and post-irradiation annealing. The atomic force microscopy (AFM) and Fourier transform infrared spectroscopy (FTIR) were used to analyze the variation of surface morphologies as well as molecular bindings. Both of the γ-APTES and γ-APTES + NPs membranes exhibited great AFM surface morphology changes and FTIR spectrum variation after γ-ray irradiation. Their sensing performances also showed severe degradation. However, it is found that the γ-ray irradiation-induced damages of the γ-APTES+NP+UV membrane can be restored by a 20min post-irradiation UV anneal. This result is consistent with the AFM surface morphology measurement and FTIR analysis. Since PDMS can be oxidized by UV light, it is believed that the nano composite of PDMS-treated silica NPs mixed with γ-APTES forms a lot of γ-APTES/SiO2 interfaces with enhance the post-irradiation UV oxidation, and hence restore the sensor from degradation.

參考文獻


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