本研究主要是討論利用III-V族半導體砷化鎵基板使用有機金屬化學氣象沉積法(MOCVD Metal-organic Chemical Vapor Deposition)再配合水氣氧化法(wet oxidation)製成850nm垂直共振腔面射型雷射(VCSEL Vertical-Cavity Surface-Emitting Laser),面射型雷射一般應用於通訊、雷射滑鼠、醫療雷射等方面,本研究則是把面射型雷射應用於夜間照明安防監控之輔助光源。一般常用於監視器輔助光源通常為發光二極體(IR LED)元件,本次研究主要探討兩者元件之間製程上的差異性與優缺點,還有對元件的影響。並且比較實際應用於夜間照明的使用效果,從研究結果得知從特性上VCSEL不論在工作電流、頻寬、光束角度、耐熱等特性上,皆比IR LED來的更加優良,也更易於使用,而實際使用於夜間照明輔助光源系統上可以發現VCSEL的目視效果比起IR LED來的更加清晰,畫面也比IR LED機型來得更加優良。
This study is to discuss the use of III-V semiconductors GaAs substrates using metal organic chemical vapor deposition (MOCVD Metal-organic Chemical Vapor Deposition) and then with water vapor oxidation (wet oxidation) made of 850nm VCSELs (VCSEL Vertical-Cavity Surface-Emitting Laser), used in security monitoring of nighttime lighting auxiliary light source. Commonly used monitor with auxiliary IR LED(light-emitting diode) light source to compare, that regardless of the operating current VCSEL, bandwidth, beam angle, heat and other characteristics are superior to the more than IR LED, but also easier to use the results from the study.