P型氮化鋁鎵歐姆接觸金屬接面特性之研究

本篇論文針對P型氮化鋁鎵（P-type AlGaN）材料之歐姆接觸在電極之製作，在製程上提出兩種不同的金屬組合鉑/鈀/金（Pt/Pd/Au）與鈀/金（Pd/Au）方法來製作歐姆接觸，並研究其差異性，在論文中金屬薄膜製程上採用環型傳輸線模型(CTLM)方法，研究金屬-半導體在不同退火溫度條件下，量測其電流-電壓特性，並計算其特徵值電阻，目的是為了改善金屬與半導體之間介面的良好歐姆接觸。實驗指出多層金屬鉑/鈀/金（15/5/10nm），比雙層金屬鈀/金（50/10nm）對p-AlGaN歐姆接觸組合更能降低特徵電阻。亦發現利用高溫活化製程對金屬之影響，在鉑厚度為10nm，其退火特徵值電阻以可以大大降低到∼10^-4（Ω-cm^2），高溫活化製程對於歐姆接觸有明顯的改善外，增加電極層鉑不僅可以幫助接面形成良好的歐姆接觸特性，更可以有較低之特徵接觸電阻值，實驗結果顯示金屬與p-型氮化鋁鎵結構， Pt/Pd/Au金屬厚度分別為15/5/10nm的條件下，在熱處理溫度700℃的氮氣環境下退火1分鐘，可得到較低之特徵接觸電阻值4.1×10^-4Ω-cm^2

關鍵字

氮化鋁鎵；特徵值電阻；環型傳輸線模型（CTLM）；歐姆接觸

並列摘要

This paper ohmic contact the material extremely manufactures in view of the P-type AlGaN in the electricity, in the regulation proposed two kind of different metals groups Pt/Pd/Au and the Pd/Au method manufactures the ohm contact, and studies its difference, in the metal thin film system regulation uses the circle transmission line model (CTLM), the research metal - semiconductor under the different annealing temperature condition, surveys its electric current – voltage characteristic, and calculates its specific contact resistance, .The goal is for improve between the metal and the semiconductor lies between the surface good ohm contact. The experiment pointed out the multilayered meta, can reduce the characteristic resistance compared to double-decked metal b to the p-AlGaN ohmic contact combination. Also discovered the use high temperature activation system regulation to influence the metal, increases Pt thickness 10nm scope, its anneal specific contact resistance by may greatly reduce to 10^-4（Ω-cm^2）, the high temperature activation system regulation has outside the distinct improvement regarding the ohm contact, increases the electrode level platinum not only to be allowed to help the composition plane to form the good ohm contact characteristic, may have comparatively lowers the characteristic specific contact resistance number, the experimental result demonstration metal and p-type AlGaN structure, a metal thickness respectively is under the 15/5/10nm condition, under the heat treatment temperature 700℃ nitrogen environment anneal 1 minute, may obtain comparatively lowers characteristic specific contact resistance number 4.1×10^-4Ω-cm^2

並列關鍵字

AlGaN ； specific contact resistance ； circle transmission line model ； ohmic contact

參考文獻

[1] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M.Sano, and K. Chocho, Appl. Phys. Lett. 72, 211 (1998) .