本文主要以脈衝直流磁控濺鍍系統使用田口實驗法則進而得到實驗中最佳化氮化鈦薄膜參數組之濺鍍實驗。配合改善舊製程舊有問題的脈衝式直流磁控濺鍍系統以固定電流、夾具轉數、溫度、工作距離與工作角度等參數方式,第一階段配合田口L9直交表挑選出工作時間、功率、氬氣流量、氮氣流量之參數配合田口直交表挑選範圍進行鍍膜實驗,接著使用L9田口直交表中S/N比分別對鍍膜速率、薄膜硬度、平均粗糙度等進行實驗分析推算最佳化參數組,第二階段使用加入交互作用的L18田口直交表挑選出工作時間、功率、氬氣流量、氮氣流量之參數配合經過L9直交表作的結論調整後的範圍進行鍍膜實驗,在由田口直交表中S/N比分別對鍍膜速率、薄膜硬度、平均粗糙度等進行實驗分析推算最佳化參數組。 由本實驗中最佳化設置須考慮三種最佳化外還需考慮到交互作用的組合,取主效果薄膜硬度的電源功率以及氬氣流量作為最佳化的第一半,電源功率400 W、氬氣流量30 sccm(B1、C3),氮氣流量交互作用的功率400 W、氮氣流量20 sccm(B1、D3)保留,接著將鍍膜粗糙度除了電源功率400 W、氬氣流量30 sccm(B1、C3),氮氣流量15 sccm效果以薄膜硬度主效果與薄膜粗糙度主效果以及薄膜粗糙度氬氣流量、氮氣流量交互作用中以氬氣流量(C1、D2)效果氮氣流量選擇氬氣流量15 sccm (D2),再將最後鍍膜速率主效果的Pulse on納入最佳化,因此第二階段實驗挑選了Pulse on 200 μs電源功率400 W、氮氣流量30 sccm、氬氣流量15 sccm (A2、B1、C3、D2)為最佳化組合。
In this paper, the TiN optimel experiment is using the Taguchi method to get the best parameter for pulsed-DC magnetron sputter system, us the fixed current, fixture rotation, temperature, and the parameters of worki0ng distance and angles that select the level for Pulsed-DC magnetron sputter system. The parameters of working time, power, argon flow and nitrogen flow by using L9(34) orthogonal arrays. Afterwards, using S/N ratio of L9(34) orthogonal arrays of analyze the experiment, sputtering the TiN films optimization for the film hardness, and the average roughness to calculate the best parameter set. In the L9 orthogonal array by adjusting the range, using the L18 Interaction orthogonal array selected the work of time, power, argon gas flow, nitrogen flow parameters in the second stage, by the S / N on the rate, hardness, roughness analysis of optimization. From this experiment, by the three optimizat, needs to take into account the interaction of the combination. The first half is power 400 W,argon gas flow rate 30 sccm (B1, C3) and take the film hardness main effect of the power and argon gas flow, reservation interaction of power 400 W,nitrogen flow 20 sccm (B1, D3). In addition to power 400 W and argon gas flow 30 sccm (B1, C3)of the average roughness, the nitrogen flow 15 sccm (D2) take main effect of film hardness, roughness and interaction of nitrogen flow and argon gas flow. Then finally optimized, the deposition rate to select the main effect of Pulse on, so the second stage, optimal combination is Pulse on 200 μs, power 400 W, nitrogen flow 30 sccm and argon gas flow 15 sccm (A2, B1, C3, D2).