- 學位論文
退火製程對鉻及氧化鉻薄膜之蝕刻影響
Influence of annealing process on etching of Cr and CrOx films
摘要
黑色矩陣是彩色濾光片的關鍵製程之一。黑色矩陣在蝕刻的製作過程中，常因為黑色矩陣中的鉻及氧化鉻薄膜蝕刻速率不相同，而產生底切效應，降低了它的良率。本實驗把黑色矩陣中的鉻薄膜及兩種氧化鉻薄膜(兩種氧化鉻薄膜含氧量不同)各別經由氫氣退火，然後進行薄膜的蝕刻特性、光學性質及微結構之研究。 經實驗結果得知，兩種氧化鉻薄膜經氫氣退火後光穿透率均上升，光學濃度微降，但是薄膜的表面粗糙度亦增加。在蝕刻方面，蝕刻速率隨著蝕刻液濃度增加而變快。對縱向蝕刻而言，退火後可使縱向蝕刻速率下降，但三種薄膜縱向蝕刻速率改變不大。對側壁蝕刻而言，含氧量較多的氧化鉻薄膜側壁蝕刻速率最快。退火後，含氧量較多的氧化鉻薄膜側壁蝕刻速率也下降最多，約下降了10倍，降低了底切效應的發生。
並列摘要
Black matrix is one of the key processes in producing color filter used in flat panel industry. Films made of chromium and combinations of its oxides are commonly used in black matrix. Due to differences in etching rates among chromium and its oxides, undercuts are usually formed in etching the combination of these materials. This undesirable effect led to poor yields. Film made of chromium and two chromium oxides with different oxygen contents were annealed in hydrogen. Etching, transmission of visible light, and microstructure of these films were investigated. From the experimental result, after hydrogen annealing, transmission of visible light of two kinds of chromium oxide films risen and optical density drooped, but the surface roughness of the films also increased. At the etching aspect, the etching rate becomes fast with etching liquid consistency increment. About vertical etching of films, the vertical etching rates of films were found to be lower after annealing, but three kinds of films vertical etching rate change is not obvious. About side etching of films, the chromium oxide that contain the most amount of oxygen, it’s of the side etching rate is the fastest. Among these annealed films, the side etching rate of the oxide with higher oxygen content decreased almost by a factor of ten and reduced the occurrence of undercuts.