新型的NDR元件之設計與應用

Design and Applications of the Novel NDR Devices

洪士勛(Shih-Hsun Hung)

指導教授 ： 陳耀煌

崑山科技大學/工程學院/電子工程研究所/碩士(2007年)

摘要

本篇文章我們所使用的新型的負微分電阻元件(negative-differential-resistance；NDR)是利用MOS與HBT之元件所組成。其中我們將NDR元件分類為兩種：其一架構稱為MOS-HBT-NDR元件，另一架構稱為HBT-NDR元件。而其電流-電壓特性曲線呈現Λ型或是N型，所以我們可以稱此架構為Λ型或是N型NDR元件。我們再利用單穩態-雙穩態傳輸邏輯閘(monostable-bistable transition logic element，MOBILE)的操作原理將NDR元件或是NMOS來當負載(LOAD)電路或是驅動(DRIVER)電路，利用並聯在負載(LOAD)或是驅動(DRIVER)電路的金氧半場效電晶體(MOSFET)來調變其I-V特性曲線，來設計類比/數位轉換器、邏輯電路、除頻器。而利用多個NDR元件以串聯或是並聯方式，而其I-V特性曲線呈現出摺疊的特性，以此特性來設計多值記憶器電路。

關鍵字

負微分電阻元件 ； 多值記憶器 ； 類比/數位轉換器 ； 邏輯電路 ； 除頻器

並列摘要

In this paper，we study the novel negative-differential-resistance (NDR) device which are composed of MOS (Metal-Oxide-Semiconductor Field Effect Transistor，MOS) and HBT (heterojunction bipolar transistors，HBT) is investigated. According to the transistors which were used， the NDR devices were classified into two kinds. First kind of the NDR device is called as the MOS-HBT-NDR device. Second kind of the NDR is called as the HBT-NDR device. According to the I-V characteristics，the NDR device differentiate between Λ type and N type. Two NDR devices are used to design the logical circuit、analog/digital converter and frequency divider. One NDR device is load and the other is driver with the principle of monostable-bistable transition logic element (MOBILE). The I-V characteristic curves of NDR device can be modulated by a MOSFET which is connected parallel with the NDR device. When we connected several NDR devices in parallel or series，the I-V characteristic is foldable. Therefore， we can use of this I-V characteristic to design the multiple-state memory circuit.

並列關鍵字

frequency divider ； logic circuit ； negative-differential-resistance ； multiple-state memory ； analog/digital converter

參考文獻

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