氧化鋅薄膜備製及其二極體應用

The preparation of ZnO thin film and its diode application

陳振龍(Jhen-lung Chen)

指導教授 ： 黃文昌

崑山科技大學/工程學院/光電工程研究所/碩士(2011年)

摘要

本研究藉由溶膠凝膠法來備製氧化鋅薄膜，並探討其熱退火處理500℃~900℃的氧化鋅薄膜結晶品質、形貌、及發光特性之影響，經由XRD分析發現溶膠凝膠法所備製的氧化鋅薄膜有良好的C軸(002)方向，並由900℃熱退火處理得到最佳薄膜。
並以溶膠凝膠法所備製之氧化鋅薄膜作為晶種層，以水熱法成長氧化鋅奈米柱，並由500℃~900℃進行熱退火處理。經SEM分析發現奈米柱長度為2.906µm寬度0.630µm，經由700℃熱退火處理後，長度提高為3.736µm寬度0.680µm。
最後我們將氧化鋅薄膜應用於Ag/ZnO/n-InP 蕭特基二極體，經由400℃退火時，其ф=0.66eV，n=1.47 Ag/n-InP其ф=0.41eV，n=1.36 經比較發現有氧化鋅比無氧化鋅薄膜有較好的二極體電性。

關鍵字

溶膠凝膠法 ； 氧化鋅

並列摘要

An ZnO thin film prepared by sol gel method was discussed in the paper. The film quality included crystalline, surface morphology and optical characteristics were observed after the annealed ranged from 500 to 900 ?aC. It is found that the films showed preferential growth of c-axial ZnO (002) orientation and a best film quality was observed after 900 ?aC annealing.
An ZnO nanowire was also prepared by using ZnO thin film as seed layer through Hydrothermal. It is found a length of 2.906 µm and width of 0.630 µm ZnO nanowire was growth in the unannealed sample, and it was grown with a length of 2.906 µm and a width of 0.630 µm after 700 ?aC annealing.
The undoped ZnO thin film was applied to as barrier layer of the Ag/ZnO/n-InP Schottky diode. It showed a barrier height of 0.66 eV with an ideality of 1.47. The barrier height is higher than that of conventional Ag/n-InP Schottky diode.

並列關鍵字

Sol-gel ； ZnO

參考文獻

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