高功率發光二極體之覆晶圖案化矽副載具與鋁矽組合式副載具之開發

The development of the flip chip patterned silicon and the integrated silicon-aluminium submounts for high power LEDs

陳泰均(Tai-Jyun Chen)

指導教授 ： 陳文瑞

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2011年)

摘要

本實驗提出了兩個新的副載具分別為鋁矽組合式以及金錫柱狀電極副載具。鋁矽組合式副載具為矽基板與鋁基板結合以打線封裝高功率LED，金錫柱狀電極副載具為P極開出柱狀電極搭配金錫合金，改善以往覆晶封裝時，因為晶粒的P、N高度不同而產生應力不均的現象。本實驗電路圖形皆為三串三並之電路圖。
在鋁矽組合式實驗中我們成功的將厚度275μm的矽基板，於KOH溶液蝕刻穿過底部。時間為23小時，在55oC時蝕刻速率約為0.16um/min。金錫柱狀電極之間距以5×10μm之間距為最佳間距。剪力強度的部份明顯地看的出來柱狀電極之剪力強度大於無柱狀電極，其中剪力強度提升了62%。

關鍵字

副載具 ； 金錫合金 ； 剪力強度

並列摘要

This study proposed two new submount with aluminum silicon composite and Au-Sn pillar respectively. Aluminum silicon composite submount was the silicon substrate and the aluminum plate combine then used conventions gold wire packaging high power LEDs, Au-Sn pillar electrode submount was P pole with pillar electrode collocation Au-Sn alloy, improve the previous flip-chip packageing was the P pole and N pole height difference cause stress unbalance. The circuit pattern were three parallel and three series in this study.
We success etching silicon until through, the silicon substrate thickness was 275μm, the etching time was 23hr at 55oC KOH solution, the etching rate was about 0.16um/min. between Au-Sn pillar fine-pitch used 5×10μm does the optimal parameter, obvious shear strength of Au-Sn pillar better than without Au-Sn pillar, the shear strength enhance 62%

並列關鍵字

Submount ； Au-Sn alloy ； Shear strength

參考文獻

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