以超高頻電漿增強化學氣相沉積(VHF PECVD)研製可撓式非晶矽薄膜太陽能電池

Fabrication of Flexible Amorphous Silicon Solar Cells by Very High Frequency Plasma Enhanced Chemical Vapor Deposition

謝宜峰(Yi-Feng Hsieh)

指導教授 ： 莊賦祥

共同指導教授 ： 蔡欲勝(Yu-Sheng Tsai)

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2011年)

摘要

本論文以超高頻電漿增強化學氣相沉積系統(VHF PECVD)研製可撓式非晶矽薄膜太陽能電池，分別以250 ℃及180 ℃沉積非晶矽薄膜太陽能電池 (ITO/a-Si(p-i-n)/Al)於玻璃基板及塑膠基板上，所製得之非晶矽薄膜以UV-VIS、J-V、SEM、效率量測等量測分析其性質。主要討論改變製程參數對非晶矽本質層薄膜與太陽電池的電性及光學性質之影響。藉由調變矽烷濃度比、製程壓力、電極距離、本質層厚度及於p/i之間加入緩衝層來探討矽薄膜特性包括沉積速率、光學特性、電特性，找出製程最佳參數應用於可撓式非晶矽薄膜太陽能電池。論文實驗分成三大部分，第一個部分為設定基板溫度為180 ℃，並於玻璃基板上找尋最佳參數應用於可撓式塑膠基板上，於180 ℃之玻璃基板上有最佳元件特性Voc：0.87 V、Jsc：8.5 mA/cm2、FF：66.9 %、Eff.：4.95 %。第二部分為250 ℃玻璃製程，於元件受光面壓印光封存結構，選用膠材與不同光封存結構提升太陽能電池元件效率，使用膠材5022、V-type光封存結構時最佳元件特性為6.27 %。第三部分為可撓式非晶矽薄膜太陽能電池，使用PES(180 ℃)及PI film(250 ℃)兩種基板，並針對可撓式基板表面處理，使表面平整以利於薄膜製程。於PES基板與PI film基板製程可撓式非晶矽薄膜太陽能電池分別有最佳元件效率4.09 %與3.09 %。

關鍵字

可撓式 ； 非晶矽 ； 薄膜 ； 太陽能電池 ； VHF-PECVD

並列摘要

In this study, we develop flexible amorphous silicon thin film solar cells by very high frequency plasma enhanced chemical vapor deposition system (VHF-PECVD); the a-Si:H solar cells structure is ITO/a-Si(p-i-n)/Al, and the temperatures of the device were 250 ℃and 180 ℃ respectively. The a-Si:H was deposited on the glass substrate and the PI film substrate respectively, and we analyzed the thin film properties by measuring UV-VIS、SEM and J-V . The a-Si:H solar cells with the best performance are obtained by changing electrode distance, pressure, hydrogen dilution ratio(SC %), thickness of the intrinsic layer, and p/i interface buffer layer. This paper is divided into three parts; the first part is to develop a-Si:H on glass substrate at 180℃, and change the parameter to find the best performance with flexible amorphous silicon thin film solar cells. When the substrate is glass at 180℃, the characteristics of the devices are as follows: open circuit voltage of 0.87 V, short circuit current density of 8.5 mA/cm2, fill-factor of 66.9 %, and conversion efficiency of 4.95 %. The second part is to develop a-Si:H on glass substrate at 250℃. We used a different simple transfer-print technique to print a micro structure with the different UV glue layer which was coated onto the component’s illuminated face of the solar cell. The best conversion efficiency is 6.27 % when the glue and the light trapping structures are 5022 and V-type. The third part is the flexible amorphous silicon thin-film solar cells by PES(180℃) and PI film(250℃) substrates; the device produced smoothly when the flexible substrate surface is smooth. To develop a-Si:H on PES substrate at 180℃ result in the optimal characteristics: Voc: 0.82 V, Jsc: 9.08 mA/cm2, FF: 51 %, eff.: 4.09 %. And to develop a-Si:H on PI film substrate at 250℃ result in the optimal characteristics: Voc: 0.86 V, Jsc: 6.54 mA/cm2, FF: 54.9 %, eff.: 3.09 %.

並列關鍵字

flexible ； thin film ； solar cells ； a-Si:H ； VHF PECVD

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