添加Na2SeO3鹽類對Cu2ZnSn(SSe)4薄膜成長之影響

The Study of Cu2ZnSn(SSe)4 Thin Film Growth By Adding Na2SeO3 Salts

張庭瑋(Ting-Wei Chang)

指導教授 ： 楊立中

國立虎尾科技大學/工程學院/材料科學與工程系材料科學與綠色能源工程碩士在職專班/碩士(2016年)

摘要

本研究是以鋅錫硒Cu2ZnSn(SSe)4薄膜在太陽能電池吸收層材料之應用。其製程是利用鋅、錫、硒三種元素材料，以不同的比率配置並在1050 oC的溫度下於石英管中熔煉成二元化合物ZnSe和SnSe，再加入CuS，藉由濕式球磨法(Ball Milling)製備成漿料(Ink)，球磨後再加入Na2SeO3(亞硒酸鈉)，其漿料(Ink)以Cu/Zn+Sn原子百分比為0.8、1.2，並以旋轉塗佈法(Spin Coating)將漿料塗佈於基材上形成富銅、貧銅，再置於爐管內進行(300 oC ~500 oC)快速退火製程(RTP)，其熱處理時間為10min，在通入高純氮氣體下，藉由高溫擴散(Diffusion)，製備出具有鋅黃錫結構(Kesterite)，2-3μm厚的薄膜。
利用感應耦合電漿質譜分析儀(ICP)能量散射光譜儀(EDS)分析薄膜成分、掃描式電子顯微鏡(SEM)檢視薄膜表面形貌與橫截面、X光繞射分析儀(XRD)判斷薄膜晶體結構、紫外光可見光分光光譜儀分析薄膜光學性質。實驗結果得知Cu/Zn+Sn原子百分比為0.8，溫度在500°C下退火時間10分鐘之CZTSSe薄膜，有較好的結晶性，其能隙為1.44eV。

關鍵字

銅錫鋅硫硒 ； 太陽能電池 ； 塗佈 ； 前驅層 ； 非真空

並列摘要

The experiment is investigate on the application of Cu2ZnSn(SSe)4 for solar cell absorber layer materials. First of all, Zinc, tin, selenium the three elements, prepared by melting into the ZnSe, SnSe and adding CuS compound to mix, the ink is prepared using wet-ball milling, after adding Na2SeO3 to mix Cu/Zn+Sn atomic ratio were 0.8、1.2，by spin coating. The precursor layer is placed in RTP furnace, and then heated at the temperature between 300 oC to 500oC,respectively, for 10minutes，prepared Cu2ZnSn(SSe)4 2-3μm thick film.In passing a high purity nitrogen gas under high temperature by diffusion。
The compositions of the films were determined by inductively coupled plasma-mass spectrometer(ICP) measurements，Surface and cross-section morphologies were observed by scanning electron microscopy.The crystal structure of the films was analyzed by X-ray diffraction .Optical properties were recorded by UV-Vis-NIR spectrometer. Based on the results of the experiments, the thin films (Cu/Zn+Sn atomic ratio = 0.8) with Better crystalline were obtained by RTA 500 oC , 10 minutes. It also showed higher crystallinity with larger grain size, and the band gap was 1.44eV.

並列關鍵字

Cu2ZnSn(SSe)4 ； Solar cells ； Ball milling ； Precurso ； Non-vacuum

參考文獻

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