隨著光電產業的成長,ITO 透明導電膜的應用也越來越廣泛。由於 ITO 具有高透 明性與良好的導電性,且化學性質穩定。因此,液晶顯示器 (LCD)、平面顯示器 (FPD)、 有機發光二極體 (OLED)、太陽能電池 (Solar Cell) 與感測器 (Sensor) 等,都是其應用的範 圍。 本實驗利用射頻磁控濺鍍法,將金屬 Titanium(Ti) 做為中介層先鍍於玻璃試片,再 沉積 ITO 透明導電膜。藉由工作壓力,Ti 中介層的厚度,ITO 膜之射頻功率及沉積速率, 與退火溫度,以上各項參數的改變,來探討 ITO 性質之影響。 從實驗結果中發現,有 Ti 中介層之 ITO 玻璃試片與單純鍍上 ITO 之玻璃試片在 300 °C-400°C 退火後,約可降低 20%-40% 的電阻值,且以 XRD 量測晶體結構後顯示,有 Ti 中介層之 ITO 玻璃試片之 (400) 結晶面也明顯的優於單純鍍上 ITO 之玻璃試片,而在 可見光的平均穿透率上,Ti 中介層之 ITO 玻璃試片雖約略小於純 ITO 玻璃試片,但仍 有 80% 以上。本實驗工作壓力為 3.6x10‾3 Torr,Ar 流量為 20 sccm,DC 功率為 100W(Ti), RF 功率為 50W-100W (ITO)。
The application of ITO used generally by the growth of opto-electronic industry. Because the high optical transparency, good conductivity and stable chemical properties, ITO can used in liquid crystal display (LCD), flat panel display (FPD), organic light emitting diode (OLED) and sensor etc.. In this study, we deposit ITO thin film with a thin Ti interlayer on glass by RF magnetron sputtering. We research the properties of ITO thin film by changing different working pressure, the thickness of Ti interlayer, RF power and deposition rate of ITO and annealing temperature. The experimental results showed that the ITO glass with Ti interlayer can reduce about 20%-40% resistivity compare to the pure ITO glass after 300°C-400°C annealing. (400) in ITO glass with Ti interlayer is superior to the pure ITO glass. A little inferior to the pure ITO glass, but the average transmittance in the visible region is above 80%. The working pressure 3.6x10‾3 Torr, Ar flow rate 20 sccm, DC power 100W (Ti), RF power 50W-100W (ITO).