N型與P型氧化鋅之研製

Study On N-type And P-type Zinc Oxide Thin Films

許家銘(Chia -Ming Hsu)

指導教授 ： 雷伯薰

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2012年)

https://doi.org/10.6827/NFU.2012.00089

摘要

本論文以雙電漿輔助有機金屬化學氣相沉積法(DPEMOCVD)成功備製氧化鋅摻鋁薄膜於PES基板上，氧化鋅摻鋁薄膜特性與沉積溫度和鋁含量有關。最佳溫度為185 ℃與最佳鋁含量為2.88%，在可見光範圍內平均穿透率為89%，最低阻值為6.36 x 10-4 Ωcm，在PES基板上備製氧化鋅摻鋁薄膜應用於OLED之陽極，在電壓10伏特下有最高亮度為2820 cd/m2、最高效率為11.6 cd/A、且有最窄的電致發光(EL)之半高寬， OLED元件之陽極是使用業界ITO玻璃與業界之鍍ITO在PEN基板及我們DPEMOCVD沉積於PES基板上的氧化鋅摻鋁薄膜相比較下，很明顯看出我們的PES基板上氧化鋅摻鋁薄膜備製OLED元件特性較佳。
以低溫下成長氧化鋅摻鋁薄膜於藍寶石基板上，在電漿功率350 W的條件下，藍寶石基板上之氧化鋅摻鋁薄膜在成長溫度在185 oC有較佳的電特性，電阻率為1.85×10-4 Ωcm，載子濃度為3.66×1021 cm-3，移動率為10.08 cm2/Vs，平均穿透率為88.5%，並應用於藍光二極體上當作透明導電層使用，跟銦錫氧化物作比較，氧化鋅摻鋁薄膜就可以跟銦錫氧化物應用在透明導電層中光電特性皆相同，在銦跟錫的礦產越來越稀少的情況下，氧化鋅摻鋁薄膜取代銦錫氧化物薄膜的日子不遠了。
另外本論文以低溫下成長氧化鋅摻氮薄膜，當成長溫度慢慢增加，基板提供足夠能量使氧化鋅摻氮薄膜成長。在電漿功率350 W的條件下，藍寶石基板上之氧化鋅薄膜在成長溫度在280 oC有較佳的電特性，電阻率為1.29 Ωcm，載子濃度為6.791?1018 cm-3，移動率為7.581cm2/Vs，P型氧化鋅；進一步以拉曼、二次離子質譜儀(SIMS)來量測，並以XRD量測來證明DPEMOCVD成長的晶格方向正確，在可見光波段下的穿透率大約87%。

關鍵字

雙電漿有機金屬化學氣相沉積法 ； 氧化鋅摻氮 ； 氧化鋅摻鋁 ； 低溫 ； 聚苯醚碸有機發光二極體

並列摘要

This study proposes flexible organic light-emitting diodes (OLEDs) grown on polyestersulfone (PES) using Al-doped zinc oxide (AZO) as anode, which is fabricated by dual-plasma-enhanced chemical vapor deposition (DPEMOCVD) system. The experimental results including crystalline structure, optical and electrical characteristics indicate that the quality of AZO films grown on PES depends on the deposition temperature and Al content. The optimum deposition temperature and Al content for AZO film are 185 oC and 2.88 at %, respectively. Further increasing or decreasing the deposition temperature and Al content will degrade quality of AZO films. The optimum AZO film deposited on PES substrate was used as the anode for flexible OLED. It shows a similar performance as compared with OLEDs using commercial indium-tin-oxide (ITO) as anode on glass, and represents better characteristics than that of commercial ITO anode on flexible polyethylene naphathalate (PEN) substrate. This indicates that the DPEMOCVD-deposited AZO film on PES substrate can be the anode for flexible OLEDs.
The optimum substrate temperature for Al-doped ZnO thin film grown by DPEMOCVD system is 185 oC under the conditions of chamber pressure of 50 mtorr, DC and RF power of 1.8 Watt (W) and 350 W. The Al-doped ZnO grown on sapphire at 185 oC represents a strongest (002) peak intensity observed in X-ray diffraction (XRD), a highest transmittance of 88 %, and lowest resistivity of 1.857×10-4 Ωcm. Finally, we apply the Al-doped ZnO thin film to InGaN/GaN light-emitting diode as the transparent conductive layer (TCL). As compared to the InGaN/GaN LEDs with indium-tin-oxide (ITO) TCL, the InGaN/GaN LEDs with Al-doped ZnO thin film present the same optical and electrical characteristics, indicating that the Al-doped ZnO thin film grown by DPEMOCVD system can be a candidate for TCL in InGaN/GaN LEDs.
Addition, The N-doped ZnO thin flims grown on Sapphire at 280 oC represents a strongest (002) peak intensity observed in X-ray diffraction (XRD), a highest transmittance of 87 %, and resistivity of 1.29Ωcm, conductivity type of P,carrier concentration of 6.791?1018cm-3, mobility of 7.581cm2/Vs.

並列關鍵字

Al-doped ZnO (AZO) ； Dual-plasma-enhanced metal-organic chemical vapor deposition (DPEMOCVD) ； Organic light-emitting diodes (OLEDs) ； Polyestersulfone (PES) ； N-doped ZnO

參考文獻

[9] T. Minami, T. Miyata, “Present status and future prospects

[26] T.V. Butkhuzi et al., “Optical and Electrical Properties of Radical

[1] H. Kim, J. S. Horwitz, W. H. Kim, S. B. Qadri, Z. H. Kafafi, “Anode material based on Zr-doped ZnO thin film for organic light-emitting diodes”, Appl. Phys. Lett., vol. 83 (2003) 3809-3831.

[2] L. Wang, J. S. Swensen, E. Polikarpov, D. W. Matson, C. C. Bonham, W. Bennett, D. J. Gaspar, A. B. Padmaperuma, “Highly efficient blue organic light-emitting devices with indium-free transparent anode on flexible substrate”, organic electron., vol. 11, (2010) 1555-1560.

[3] S. P. Jung, D. Ullery, C. H. Lin, H. P. Lee, J. H. Lim, D. K. Hwang, J. Y. Kim, E. J. Yang, S. J. Park, “ High-performance GaN-based light-emitting diode using high transparency Ni/Au/Al-doped ZnO ZnO composite contacts”, Appl. Phys. Lett., vol. 87 (2005) 181107.