本論文本基於暫態液相(TLP)接合技術,提出一應用於覆晶封裝之電極薄膜,使用素玻璃做為基底,在素玻璃基板上共蒸鍍鋁鍺,沉積鋁鍺共晶薄膜後,將其濺鍍薄銅層做為晶種層,以成本較為低廉的電鍍法,電鍍鋅層以及電鍍錫層,整個金屬堆疊層總厚度將控制在1.5μm以內。並分別進行270°C、290°C、310°C、330°C、350°C、370°C、390°C、410°C、430°C的熱壓合,測量其剪力,找出最佳接合溫度,並分析其裂面剝離層,對此層做SEM、EDS及XRD等儀器分析,檢查金屬堆疊層經過高溫真空熱壓合後,所產生之共晶相對樣品剪力的影響。
In this paper, based on transient liquid phase (TLP) bonding technology. Proposed electrode film that can be applied to the film flip chip package. I use glass as a substrate, The Al-Ge film is deposited on the glass substrate by thermal evaporation. After the deposition of aluminum-germanium eutectic film, that sputtering a thin layer of copper as the seed layer. Relatively low cost method of electroplating. Electroplated Zn layer and Sn layer. The total thickness of the metal layer controlled at 1.5μm. And they are bonded at the temperature of 270°C、290°C、310°C、330°C、350°C、370°C、400°C、430°C, respectively. Then measuring the shear to find the best bonding temperature, and analyze the peel layer. Using SEM, EDS and XRD analysis instruments peeling surface. Check the metal layer after high temperature vacuum thermal bonding. Effect of eutectic phase to the samples shear.