應用鋁鍺共晶於高功率交流發光二極體覆晶封裝之研究

The Study of Flip Chip Packaging Technique on AC-Drived High Power LEDs by Al-Ge Bonding

廖政峰(Zheng-Feng Liao)

指導教授 ： 陳文瑞

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2011年)

摘要

本研究藉由微機電技術製作出LED封裝模組，於矽基板上製作覆晶封裝方式之電極電路圖形，並藉由電鍍製程增厚電極降低薄膜電阻值，提高導電率與導熱能力。再使用濺鍍與熱蒸鍍方式，分別鍍上鋁薄膜、鍺薄膜與銦薄膜，並分別加熱至200℃與450℃退火24小時，發現於200℃時，鋁鍺薄膜與鋁鍺銦薄膜並無發生MIC現象；而在450℃時，發現鋁鍺薄膜與鋁鍺銦薄膜有達到共晶互熔現象。
然後使用共晶組成之鋁鍺薄膜、鋁鍺銦薄膜與AC-LED以450℃退火24小時進行覆晶接合，並量測其接面溫度、熱阻與光功率，同時與使用金錫合金封裝相比，發現彼此之間相差不遠，這說明著鋁鍺、鋁鍺銦共晶薄膜在LED覆晶封裝方面是可行的。

關鍵字

AC-LED ； 鋁鍺共晶 ； 接面溫度 ； 熱阻

並列摘要

In this study, the fabricated of LED package module by MEMS technology. The electrode circuit pattern of flip-chip package, were produced on the silicon substrate. The thickened with electroplating process to reduce the film resistance, to improve electrical conductivity and thermal capacity. The Aluminum films, Germanium film and Indium films were deposited on silicon wafer by sputtering and thermal evaporation, respectively. Then, annealing at 200℃ and 450℃ for 24 hours, respective. In the annealing at 200℃, the MIC does not occur in the Al-Ge films and Al-Ge-In films. In the annealing at 450℃, the eutectic Al-Ge films and Al-Ge-In film were found.
Then, we use eutectic Al-Ge film to execute the bonding experiment with flip-chip AC-LED at 450℃ for 24 hours. Then, measure the junction temperature, thermal resistance and optical power. Comparison with the Au-Sn alloy package found that relative to similar between each other. This shows that the eutectic Al-Ge and Al-Ge-In films in the LED flip-chip packages is possible.

並列關鍵字

AC-LED ； eutectic Al-Ge ； junction temperature ； thermal resistance

參考文獻

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