探討鋁/氮化鋁多層應力緩衝底層對金錫共晶接合之影響

Effect of the AuSn Eutectic Bonding Joint by Studying the Underneath Al/AlN Multiple Strain Release Layers

姜禮維(Li-Wei Chiang)

指導教授 ： 謝振榆

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2013年)

摘要

本論文以鋁/氮化鋁多層膜做為玻璃基板與金錫共晶金屬間之應力緩衝層，利用多層膜大量的異質介面切換，可增加薄膜的韌性以及阻礙裂紋的擴展，對耐磨性有顯著的提升作用。另外鋁係為一具有極佳延展性的軟性金屬，而氮化鋁為陶瓷材料，其散熱係數及硬度皆極高，彼此交互堆疊之結構可做為一薄膜應力緩衝層，提升後續沈積薄膜之可靠性。本研究以一組、兩組、三組鋁/氮化鋁多層膜做試驗，再將最上層覆蓋一鋁層，將鋁表面作處理後，以電鍍法製備所需之金錫共晶層，接著探討不同緩衝層下之最佳鍵合溫度，可以發現隨著薄膜層數的增加，最佳鍵合溫度與剪力也跟著提高，接著做各種薄膜之SEM、XRD分析，可得出最佳剪力之製程條件，亦即可達到最佳金錫共晶相ζ(Au5Sn)的鍵合狀態。隨後以黃光微影製作覆晶圖案，並將LED以覆晶封裝鍵結，完成之LED樣品，在20mA工作下可得LED之順向電壓為4.09V。

關鍵字

共晶鍵合 ； 覆晶封裝 ； 金錫合金 ； 鋁/氮化鋁 ； 剪力

並列摘要

In this thesis, the Al/AlN multiple-layer films were used as the strain release layers between glass substrate and AuSn eutectic metal. Due to a great amount of heterostructural interface change, it is beneficial to increase the material toughness, stop the fissure expansion, and enhance the abrasion resistance. In addition, Al is a soft metal with extraordinary ductility, and AlN, as a ceramic material, shows extremely high heat transfer coefficient and hardness. The integration of these two materials can form a structure that is applicable to create the strain release layers so as to enhance the later deposited film reliability. This study utilized sputtering to deposit one set, two sets, and three sets of Al/AlN multiple-layer films onto the glass substrates, and finalize an Al cap layer. After the aluminum film surfaces were chemically processed. The electroplating technique was used to prepare the required AuSn eutectic bonding layers. The optimized shear stress and bonding temperature were discussed for various release layers. It was found that the optimal bonding temperature and shear stress increased with increasing the number of film layers. Subsequently, the SEM and XRD analysis were performed on various films to find more the optimal eutectic phase ζ (Au5Sn). In the final, the photolithography was used to define the pattern of flip-chip LED bounding carrier. The encapsulated LED sample was operated at 20 mA, and the forward voltage was measured as 4.09 V.

並列關鍵字

Eutectic Bonding ； Flip Chip Package ； AuSn Alloy ； Al/AlN ； shear stress

參考文獻

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