利用電漿增強化學氣相沉積法在塑膠基板上沉積水氣阻障層之研究

本研究在室溫下利用電漿增強化學氣相沉積系統，先以四甲基矽烷和不同氧氣流量比例為源材料，在塑膠基板上沉積氧化矽無機薄膜當作水氣阻障層。研究結果顯示，於製程中通入氧氣氣體參與化學反應會使表面的碳-氫疏水基團快速減少，而產生具有親水特性之矽-氧-氫親水基團，雖然劣化以四甲基矽烷單體所沉積薄膜之疏水特性，卻可以明顯改善表面的平整度並減少孔隙的產生，以達到降低水氣滲透的能力。接著，本研究進一步針對不同射頻功率及製程壓力等參數進行調變，以獲得具有最佳阻水氣滲透能力之氧化矽薄膜，研究結果顯示，在最佳化之氧化矽薄膜製程條件下可將聚對苯二甲酸乙二醇酯塑膠基板之水氣滲透率降至1.28 g/m2-day。接著針對氧化矽阻水薄膜之厚度及沉積溫度進行調變，以進一步優化特性之研究，研究結果顯示，當氧化矽薄膜過厚時，易造成應力累積而產生龜裂的現象，進而劣化阻水功能，因此在適當之氧化矽厚度時可以達到水氣滲透率最低值。此外，昇溫製程使得沉積速率減緩且表面粗糙度更為平整，可以獲得具有更優異緻密性的氧化矽薄膜，因此水氣滲透率可進一步優化至10-1 g/m2-day。上述研究結果顯示，氧化矽無機薄膜有不錯的阻水效果，然而，在塑膠基板與氧化矽薄膜間仍有相當大的應力累積，易造成薄膜沉積時的微孔隙形成，因此，在沉積無機薄膜前製備有機層薄膜，以降低氧化矽薄膜應力，並提昇薄膜附著度，製程中首先通入四甲基矽烷單體沉積有機層薄膜減少沉積氧化矽薄膜所產生的內應力，且在薄膜的附著度上可以達到方格測試的標準，研究結果顯示在氧化矽薄膜與塑膠基板間沉積一適當厚度之有機薄膜能有效的降低水氣的滲透，其水氣滲透能力，較單層氧化矽薄膜提昇15％。此外，若在此雙層結構表面沉積一疏水薄膜，以降低水氣吸附機制，則可以更進一步優化雙層薄膜之阻水氣滲透效果。最後，本研究在塑膠基板兩側沉積多層膜結構以阻止水氣滲透，研究結果顯示，此時聚對苯二甲酸乙二醇酯塑膠基板之WVTR可進一步下降至10-2 g/m2-day。

關鍵字

電漿增強氣相沉積；水氣滲透率；氧化矽

並列摘要

In this study, the silicon oxidize films were deposited on the plastic substrates at room temperature using plasma enhanced chemical vapor deposition with tetramethylsilane and oxygen for raw materials. Deposition silicon oxidize of inorganic membranes to regard as to water vapor barrier layers on the plastic substrates. In result, carbon- hydrogen group of hydrophobic group decrease is fast when oxygen inlet the reaction in the process. The process have hydroxyl group to lead to qualify for hydrophilicity property, Although existence of hydroxyl group prepared with additive oxygen gas was responsible for the decrease of hydrophobic properties. However, the decrease surface roughness、pinholes and water vapor permeate were apparently improved at an adequate mixing tetramethylsilane and oxygen precursor. In the optimization process, the result of study shows water vapor transmission rate is 1.28 g/m2-day on the polyethylene terephthalate(PET) substrate. Then, we change various thickness and process temperature. The film produce nano pinhole, when the film is too thickness. When silicon oxidize films thickness is ideal, water vapor transmission rate will be lowest. Last, We change various process temperature. In result, deposition rate will be slower and surface roughness will be smoother and structure will be densification of process temperature is higher. The water vapor transmission rate to descend to 10-1 g/m2-day of process temperature is heating. Although, the silicon oxidize films has good water vapor barrier result, but stress is accumulated. This phenomenon will produce nano pinhole in the silicon oxidize films. We deposit organic thin film before silicon oxidize films. The organic thin film can decrease of stress and advance of adhesion. We inlet tetramethylsilane monomer manufacture organic layer. It can decrease stress of silicon oxidize and advance adhesion. The silicon oxidize films deposition applicable thickness on the plastic substrate. It can advance water vapor gas barrier characteristic. The water vapor gas barrier compares the single-layer silicon oxidize thin film to promote 15%. After, we deposition silicon oxidize of water vapor barrier thin film in the plastic substrate. In final, we deposition water-repellent films in the surface. It can decrease water vapor adsorption in the surface. We deposition multi-layer structure on both sides of base plate. The water vapor transmission rate is 10-2 g/m2-day on the polyethylene terephthalate(PET) substrate.

並列關鍵字

PECVD ； WVTR ； SiOx

參考文獻

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