矽酸鋅薄膜製程與光學特性之研究

本研究是以溶膠-凝膠法製備矽酸鋅（Zn2SiO4）摻雜型螢光薄膜，並探討不同的溶液濃度、摻雜劑、及改變熱處理條件對於矽酸鋅螢光薄膜之結構、結晶性、微結構及發光特性之影響。分別以金屬無機鹽類及金屬有機化合物為起始材料，並摻雜不同劑量的活化劑，經由溶液的混和、水解、解膠及縮聚合反應製備螢光薄膜。實驗發現，改變水含量、電解質濃度、及摻雜劑種類與濃度，均可形成清澈透明的溶膠與膠體薄膜，且膠化時間隨著水含量、電解質濃度及摻雜劑量的增加而減短。改變水含量、電解質濃度及摻雜劑量對於膠體的熱活化行為、結晶性及分子結構並無明顯之影響。經乾燥後的膠體薄膜於熱處理800 ℃後，均開始產生α-Zn2SiO4 結晶，且結晶性隨著熱處理溫度的升高而增加。摻雜的膠體薄膜，其放射波長主要分別位於525 nm (綠光)及403 nm (藍紫光)，且隨著摻雜劑量增加，其放射波長有紅移現象產生。而熱處理溫度與摻雜劑量均會顯著影響膠體薄膜的發光強度，且隨著熱處理溫度的增加，及改變熱處理氣氛後，均會明顯影響其發光強度。

關鍵字

矽酸鋅；溶膠-凝膠法

並列摘要

In this study, zinc silicate（Zn2SiO4）phosphor thin film were prepared by the sol-gel process. The effects of solution concentration, doped amount, and heat treatment on the phosphor structure, crystallinity, microstructure, as well as luminescent properties of Zn2SiO4 thin films were investigated. The precursor materials were metal salts and metal organic compound.with various doped amount of activator. The doped zinc silicate phosphor thin films could be prepared by the procedures of mixing, hydrolysis, petization, and condensation reaction. Transparent sols and thin films could be obtained from appropriate concentrations of water, acidic electrolyte and different dopant concentrations. It was observed that water concentration, electrolytes and dopant amounts could remarkable affect the gelation rate of solution. With different amount of water, electrolytes, and dopants, however, the thermal activity,crystalline behaviors, molecular structures as well as the infrared spectra of thin films did not show significant difference. The dried thin films began to form the α-Zn2SiO4 crystalline phase after heat-treatment at 800 oC. The crystallinity of the thin films increased as the firing temperature increase. The photoluminescence (PL) spectra showed the peak wavelengths of the green and blue-purple emission at 525 nm and 403 nm for doped-Zn2SiO4,respectively. With the increase of doped amounts in Zn2SiO4, the emission peak has a red shift. Moreover, the heating temperature and dopant amount hadnotable influences on the luminescent intensity of phosphor thin films. With the rise of heating temperature and heating in reduce atmosphere, the luminescent intensity is enhanced significantly.

並列關鍵字

Zn2SiO4 ； sol-gel

參考文獻

[1] C. M. Lin, Y. Z. Tsai, J.S. Chen, “The microstructure and cathodoluminescence characteristics of sputtered Zn2SiO4:Ti phosphor thin films”, Thin Solid Films 515 (2007)7994–7999