利用電沉積法製備二硒化銅銦薄膜應用於太陽能電池之研究

Applications of CuInSe2 thin film prepared by electrodeposition on solar cells

王齡瑤(Ling-Yao Wang)

指導教授 ： 閔庭輝

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2011年)

https://doi.org/10.6827/NFU.2011.00095

摘要

論文主要是以成本較低且製程簡單的電沉積法來製備二硒化銅銦薄膜太陽能電池之吸收層。二硒化銅銦薄膜太陽能電池材料是具有開發潛力、材料性質穩定及具有良好的光電性質的一種材料。元件製作上，以Glass/ITO/CuInSe2/CdS/ZnO/Al結構的太陽能電池，利用電沉積法沉積二硒化銅銦薄膜在ITO導電玻璃上，使用白金片為輔助電極，ITO導電玻璃為工作電極。再使用化學水浴法來成長緩衝層硫化鎘，窗口層氧化鋅也是使用簡單的電沉積法來成長，最上層鋁電極是使用真空熱蒸鍍機成長。經由場發射掃描式電子顯微鏡(FE-SEM; JSM-7500F)、X光繞射分析儀(X-ray diffractometry)、能量分散光譜儀(Energy Dispersive Spectrometer)來觀察二硒化銅銦薄膜的晶體結構、表面形貌、組成形態及組成成份。
結果顯示在仿照太陽光模擬器之燈源照射下(AM1.5,100mW/cm2) ，本論文已經成功製作出具有光電流的太陽能電池，量測元件的開路電壓Voc=0.7 V，短路電流Isc=0.2071 mA，填充因子F.F=48%。

關鍵字

二硒化銅銦 ； 太陽能電池

並列摘要

This study describes the low cost and simple method of electrodeposition to fabricate CuInSe2 (CIS) as the major absorbent layer of thin film solar cell. CIS solar cell materials had great potential, and also had material properties stability and good optical properties of a material. This solar cell was the growth of Al/ZnO/CdS/CulnSe2/ITO/Glass structure. The absorber layer CIS thin film by electrochemical on ITO glass at room temperature. Use platinum film (Pt) of counter electrode and ITO glass of working electrode. The CdS buffer layer deposited by a chemical bath deposition (CBD) technique. The ZnO window layer deposit by electrodeposition. The most top layer was grown by thermal evaporation. The concentration effect of reagents, potential/current, deposition time, and complexing agents on film compositions was studied. The surface as morphology, film compositions, and crystal structures were characterized by scanning electron microscopy, energy dispersive spectrometer, and X-ray diffraction, respectively.
Under the irradiation of the sunlight simulator (AM1.5, 100mW/cm2), we had fabricated CIS thin film solar cell with efficiency. This device had open voltage, Voc=0.7 V, short cut current, Isc=0.2071 mA and fill factor (F.F) was 48％.

並列關鍵字

CIS ； solar cell

參考文獻

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