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  • 學位論文

半導體薄膜碎形成長過程電腦模擬之研究

A Study on the Computer Simulation for the Fractal Growth of Semiconductor Thin Films

指導教授 : 姬梁文
共同指導教授 : 方得華
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摘要


薄膜元件的品質受到半導體薄膜(尤其是奈米薄膜)的成長過程的影響,其影響包括:薄膜元件表面及界面結構、以及薄膜元件的熱學、電學與光學性質等。因此,半導體薄膜成長過程、成長機制及成長模型的研究,對於薄膜乃至晶體成長和薄膜元件的研製都具有相當重要的理論意義和應用價值。 本文主要是以理論方法,研究以電腦輔助方法進行薄膜成長過程的模擬與分析。首先根據傳統薄膜成長理論,討論薄膜成長的表面形貌和物理參數關係,建立一個薄膜成長模型;接著,應用碎形理論 (Fractal Theory) 改進擴散限制凝聚 (DLA) 模型,對薄膜的二維與三維成長過程進行模擬研究;然後,以 MATLAB 的影像處理能力與數學演算功能,將所得的薄膜成長模型進行電腦模擬的實現;最後,應用碎形理論中的碎形維度與多重碎形譜,對薄膜模擬成長結果的形貌與構造變化資訊進行分析。本文的結果可應用於奈米薄膜成長過程的動態模擬,並透過奈米薄膜成長模型模擬成長的結果分析與設計薄膜表面形貌,為薄膜元件製造提供一個有效的模擬工具。

並列摘要


The quality of the semiconductor thin film devices are involved in the process of the growth of thin films, especially nanometer thin films. These effects include: the influence of the surface and interface structure of thin film, and the thermal, electrical and optical properties of thin-film devices. Thus, the study of growth process, growth mechanisms and growth model of semiconductor thin film is the basis theory of the crystal growth and semiconductor process. This thesis is based on theoretical methods to study the computer simulation and analysis of the growth of semiconductor thin films. First, according to the traditional theory of thin-film growth, the relationship between the growth morphology and the physical parameters are discussed. Then, fractal theory has been applied to improve the diffusion-limited aggregation (DLA) model. And the simulations of the two-dimensional and three-dimensional thin-film growth are proposed. A computer program of the simulation of the thin-film growth is developed with help of MATLAB. Finally, the results of the simulation of the thin-film growth have been analyzed by the fractal dimension and multifractal spectra. The results of this thesis can be applied to the dynamic simulation of nanometer thin-film growth, and an effective simulation tool is to provide the semiconductor process.

參考文獻


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