銀鑭合金薄膜之抗氧化與抗硫化探討

Study on Against Oxidation and Sulfidation of Ag(La) thin film

詹媛婷(Yaun-Ting Chan)

指導教授 ： 方昭訓

國立虎尾科技大學/工程學院/材料科學與綠色能源工程研究所/碩士(2009年)

摘要

本研究主要探討Ag(La)合金薄膜之抗氧化與抗硫化之性質，以改善銀薄膜之高溫聚集與玻璃基板的附著性，並防止其在大氣中硫化與氧化。本實驗利用磁控濺鍍法在SiO2基板上製備Ag(0.54 - 8.74 at.% La)合金薄膜，薄膜成分以EDS分析，後續製程利用爐管對其合金薄膜進行400oC–800oC持溫1小時熱處理，並以歐傑能譜分析儀分析原子的擴散行為，藉由X光繞射儀、掃瞄式電子顯微鏡與穿透式電子顯微鏡觀察薄膜的顯微結構，探討Ag(La)合金薄膜之結構變化。同時，使用四點探針量測薄膜片電阻值變化。而薄膜與二氧化矽的附著性測試乃藉Scotch tape test 來評估。
實驗結果顯示，銀薄膜中之La摻雜原子經退火後會擴散至薄膜表面及薄膜與二氧化矽界面，並與氧原子反應而在表面處形成氧化層，而薄膜電阻率亦隨著La含量增加而有增高的趨勢。對於薄膜的抗硫化性而言，銀合金薄膜先作500-600oC的氧化預熱處理使其表面形成鈍化層，再與未形成鈍化層之合金薄膜試片經硫化後探討比較抗硫化的現象，其中以氧化預熱處理600oC之Ag (2.80-8.74 at.% La)薄膜的抗硫化性最佳，而含2.80 at.% La之銀薄膜最低片電阻為2.34 Ω/□。

關鍵字

磁控濺鍍 ； 自我鈍化 ； 銀鑭合金薄膜 ； 硫化

並列摘要

The characteristics of Ag(La) alloy thin films and its applications as the materials of interconnect were investigation in study. This work aims at preparing a high adhesion, oxidation resistance and self-passivated Ag(La) alloy thin film, which will be potentially adopted as gate material on TFT-LCD and interconnection on microelectronics. Ag(0.54-8.74 at.% La) films were prepared on SiO2/Si substrate by sputtering method and were subsequently annealed by furnace in a temperature range of 400°C - 800°C for 1 hour in oxygen ambient. Self-passivated Ag thin film in the form of La2O3/Ag/SiO2 was therefore obtained because La diffused easily from matrix toward the surface and reacted with the oxygen by forming La2O3. The formation of La2O3/Ag /SiO2 improved the resistivity, adhesion to SiO2, oxidation resistance and passivative behavior of the studied film. Besides, the Ag alloy films pre-annealed at 500°C in oxygen ambient reveal a superior sulfidation resistance . The pre-annelaed Ag(2.80 at.% La) thin film has the lowest sheet resistance of 2.34 Ω/□ .

並列關鍵字

Magnetron Sputter ； self-passivation ； Ag(La) alloy thin film ； sulfidation

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