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  • 學位論文

以雷射結晶多晶矽製造高靈敏度可撓式應變計及溫度感測器

Laser-crystallized poly-silicon-fabricated sensitive and flexible strain gauge and temperature sensor

指導教授 : 余沛慈

摘要


本論文採用化學氣相沈積氫化非晶矽薄膜和雷射退火之低熱預算技術,及結合雷射緩衝層結構(二氧化矽/鋁/二氧化矽),直接於聚醯亞胺(PI)上製備可撓式多晶矽薄膜與可撓式應變及溫度感測器。雷射緩衝層結構中的鋁/二氧化矽介面,於雷射結晶及活化時可形成熱量積與雷射反射,可促進多晶矽薄膜的晶粒生長和摻雜原子的活化,同時也會防止底部的聚醯亞胺劣化。透過此技術,雷射結晶多晶矽晶粒尺寸可達1微米以上,經由不同的離子佈植濃度與雷射功率密度控制,可有效調變多晶矽的載子濃度。在1018 ~1019 cm-3的電洞濃度下,可撓式多晶矽薄膜在彎曲和熱效應測試時,皆具有相當大的電阻變化幅度,此外,可撓式多晶矽薄膜在溫度感測方面,其溫度係數(αR)約為-0.0122℃-1,而在經過多次加熱至140℃ ,能仍保持良好的穩定度與回復性,最後,製作有高長/寬比(~100)的應變感測器方面,其應變因子則可高達68,其高靈敏性可作為智慧皮膚,整合至人體及機械手臂的微壓力感測。

並列摘要


In this thesis, the combination of plasma-deposited hydrogenated a-Si thin film, laser annealing and sandwiched laser buffer layer of SiO2/Al/SiO2 is employed to directly prepare laser-crystallized poly-Si thin film on the polyimide (PI), then fabricating flexible poly-Si strain and temperature sensors. The sandwiched buffer layer was introduced to facilitate the grain growth and efficient dopant activation due to heat accumulation and laser reflection at the interface of Al/SiO2 without deteriorating the underlying PI substrate. As a result, the grain sizes of poly-Si are around 1 μm. The carrier concentration of poly-Si can be controlled by implantation energy,implantation concentration and laser power densities. According to the bending and thermal stress test of flexible poly-Si film, it shows the significant resistance variation in the range of hole concentration of 1018 ~1019 cm-3 and demonstrates a superior temperature coefficient (αR) of -0.0122℃-1. The flexible poly-Si also reveals fair thermal-stability after cycle-heating up to 140℃. On the other hand, the fabricated strain sensor with high aspect ratio of length/with (AR~100) performs high gauge factor of 68. Such high sensitive sensors envision a potential application as an intelligent skin for light-force sensing of human-body and robotics.

並列關鍵字

Laser annealing Polyimide Poly-Si Flexible sensors

參考文獻


[1] 李培綱,"以可見光雷射退火技術製作高性能可撓式低溫多晶矽電晶體",交通大學光電研究所碩士論文,2016,Hsinchu, Taiwan, Republic of China.
[2] https://www.materialsnet.com.tw/DocView.aspx?id=11550
[3] LA Wong, William S., and Alberto Salleo, eds. Flexible electronics: materials and applications. , Vol.11, Springer Science & Business Media, 78, 2009.
[4] Donald A. Neamen, 半導體物理與元件, 麥格羅・希爾國際股份有限公司, 2010.
[5] W. Jian, C. R. Yan, "Theoretical relationship between p-type polysilicon thin film gauge factor and doping concentration", Acta Physica Sinica, 66, 247201, 2017.

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