應用多層次結構製作之矽鍺奈米線於生物感測元件上之靈敏度研究

The Study of the Sensitivity of SiGe Nanowire Bio-sensor Device Fabricated with Multi-layer (oxide/SiGe/Si-on-insulator) Structure

謝政廷(Cheng-Ting Hsieh)

指導教授 ： 張國明

國立交通大學/電機學院/電子工程系所/碩士(2011年)

https://doi.org/10.6842/NCTU.2011.00784

摘要

在近幾年來的研究上，奈米線被廣泛的研究與探討，尤其是在生物感測元件的應用上，被視為最具有潛力的元件之一。本實驗室的研究團隊已成功的製作出矽鍺奈米線，並經由實驗量測後，證實矽鍺奈米線有感測元件的特性。本論文中，我們利用半導體製程技術，製作出Ｐ型的矽鍺奈米線，再使用電漿輔助型化學氣相沉積堆疊出氧化層，最後經由氧化處理，使得矽鍺奈米線的鍺析出，成功的製作出非均質矽鍺奈米線。我們使用不同濃度的矽鍺比例、不同氧化層的堆疊厚度以及不同的氧化時間和不同的氮氣比例去做比較，最後找出具有最佳靈敏度的非均質矽鍺奈米線。因此本論文所研究出的矽鍺奈米線，能有效的應用在生物感測元件上。

關鍵字

矽鍺奈米線 ； 多層次結構 ； 生物感測元件

並列摘要

Science on research in recent years, the nanowire was extensively studied and discussed, particularly in the application of bio-sensor devices, and is considered one of the most promising components for sensing devices. In our previous research, we successfully demonstrated the SiGe nanowire and by experimental measurement, we confirmed that is presented bio-sensor characteristic. In this thesis, p-type SiGe nanowires were fabricated, which is compatible to VLSI technology. Then we exploited plasma enhanced chemical vapor deposition (PECVD) to stack oxide layer. Next step, we oxidized SiGe nanowires to precipitate Ge, successfully fabricated non-homogeneous SiGe nonowires. We use the proportion of different concentrations of silicon germanium, stack of different thickness of oxide layer, different oxidation time and ratio of different nitrogen to compare. Finally, we found non-homogeneous SiGe nanowires, which had the best sensitivity. In ours results, SiGe nanowires presented the better application in bio-sensor device.

並列關鍵字

Si-Ge nanowire ； multi-layer structure ； bio-sensor device

參考文獻

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