非晶態鎢摻雜氧化銦透明薄膜電晶體技術之研究

Study on Transparent Amorphous Tungsten Doped Indium Oxide Thin Film Transistors Technology

張志睿(Chih-Jui Chang)

指導教授 ： 劉柏村

國立交通大學/電機學院/光電工程系所/碩士(2015年)

https://doi.org/10.6842/NCTU.2015.00580

摘要

無資料

關鍵字

鎢摻雜氧化銦 ； 雙主動層結構 ； 透明薄膜電晶體 ； 顯示器

並列摘要

無資料

並列關鍵字

Tungsten Doped Indium Oxide ； bi-layer structre ； Thin Film Transistors ； TFT-LCD

參考文獻

[1] T. Kamiya, K. Nomura, and H. Hosono, "Present status of amorphous In–Ga–Zn–O thin-film transistors," Science and Technology of Advanced Materials, vol. 11, p. 044305, 2010.

[2] T. Kamiya and H. Hosono, "Material characteristics and applications of transparent amorphous oxide semiconductors," NPG Asia Materials, vol. 2, pp. 15-22, 2010.

[3] M. Katayama, "TFT-LCD technology," Thin Solid Films, vol. 341, pp. 140-147, 3/12/ 1999.

[4] Y. Kuo, Thin film transistors. 1. Amorphous silicon thin film transistors vol. 1: Springer, 2004.

[5] K. Sera, F. Okumura, H. Uchida, et al., "High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film," Electron Devices, IEEE Transactions on, vol. 36, pp. 2868-2872, 1989.