高靈敏度多晶矽奈米線場效電晶體之一氧化氮感測器

High Sensitivity Nitric Oxide Gas Sensor Based on Poly-Si Nanowires FETs

鄭定亞(Ting-Ya Cheng)

指導教授 ： 陳皇銘

國立交通大學/電機學院/光電工程系所/碩士(2016年)

摘要

本研究探討多晶矽奈米線場效電晶體對低濃度一氧化氮之感測能力。利用金屬酞菁化合物及十六氟金屬酞菁化合物修飾元件，比較其化學及物理性質差異，並藉由化合物與一氧化氮鍵結的特性，強化元件表面對氣體分子的吸附以提升感測能力。此外，本實驗更進一步探討不同水氣所造成的影響，確認一氧化氮分子與水分子之間的競爭關係。最後，實驗結果指出若一氧化氮分子與化合物中心金屬原子產生鍵結將會有較強的反應，在低濃度的環境下仍具有高靈敏度的感測能力，因此非常適用於生醫領域中氣喘病患的疾病檢測。

關鍵字

氣體感測器 ； 一氧化氮

並列摘要

In this thesis, the low nitric oxide (NO) gas level sensing property of poly-Si nanowires field effect transistors (FETs) was investigated. The blank and surface modified with metal phthalocyanine (Pc) and metal hexadecafluorophthalocyanine (F16Pc) poly-Si nanowires FET devices were investigated. In particular, the chemical structure and physical properties of these surface modification compounds were discussed. The sensing properties can be enhanced due to the strong bonding between nitric oxide molecule and the Pc compounds. Besides, the sensing ability of device under different relative humidity was also investigated. The results suggested that the bonding between gas molecule and center of metal phthalocyanine could be very strong. As a result, the oxidation reaction on the contact surface may contribute to the low nitric oxide gas level sensing ability. Therefore, the surface modified poly-Si nanowires FET is a perfect device for detection of low nitric oxide gas level as in the breath of asthma patients.

並列關鍵字

sensor ； nitric oxide

參考文獻

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