高動態範圍射頻功率檢測積體電路

Integrated Circuits of High Dynamic Range Radio-Frequency Power Detection

黃思翰(SZU-HAN HUANG)

指導教授 ： 吳建華

國立中正大學/工學院/電機工程學系/碩士(2016年)

摘要

本研究針對15 GHz頻段射頻功率檢測積體電路之高動態範圍需求，使用台積電1P6M 0.18um CMOS製程與聯華電子1P6M 0.18um CMOS製程，以電流混頻式及方均根式功率檢測兩種不同架構進行設計。電流混頻式功率檢測器量測結果動態範圍約22dB，輸入功率範圍從-7dBm至15dBm，範圍區內之輸出電壓差至少5mV以上，配合後端ADC電路之最小解析度。模擬與量測較大誤差發生在輸入功率大於14 dBm時，路徑上電晶體工作區改變，造成電路結果不盡相同，往後需注意在大訊號操作時的電晶體狀態。以聯電製程設計的方均根式功率檢測器可用動態範圍約從-12dBm至7dBm，共19dB。採用台積電製程之量測結果為可用動態範圍約從-20dBm至-10dBm，共10dB。造成此結果差異為運算放大器並無使用負回授組態，造成製程變異結果誤差較大，且根據設計上別無考慮周詳，發生電壓補償狀況，導致量測結果不符合預期。

關鍵字: 功率檢測、高動態範圍、功率檢測器、電流混頻式功率檢測器、方均根式功率檢測器

關鍵字

功率檢測 ； 高動態範圍 ； 功率檢測器 ； 電流混頻式功率檢測器 ； 方均根式功率檢測器

並列摘要

This study focuses on fully integrated 15 GHz frequency power detector by using TSMC 1P6M 0.18um CMOS process and UMC 1P6M 0.18um CMOS process.
Current mode mixing type is proposed in chapter II for 15 GHz, the measurement result of the current mode mixing type chips had 22 dB dynamic range, input power from -7 dBm to 15 dBm.
In Chapter III, the RMS type power detector is proposed for 15 GHz in this section. To improve wide dynamic range by using additional operational amplifier, the measurement result of the RMS type power detector by UMC CMOS process had 19 dB dynamic range, input power from -12 dBm to 7 dBm. The other measurement result of the RMS type power detector by TSMC CMOS process had 10 dB dynamic range, input power from -20 dBm to -10 dBm.

Keyword: Power detection, Wide dynamic range, Power detector, Current mode mixing type power detector, RMS power detector

並列關鍵字

Power detection ； Wide dynamic range ； Power detector ； Current mode mixing type power detector ； RMS power detector

參考文獻

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