以錳離子與鉻離子摻雜氧化鋅鎵薄膜的研製與性質探討

The study of Mn2+ & Cr3+ doped zinc gallium oxide thin film using sol-gel process

簡偉翰(Wei-Han Jian)

指導教授 ： 鄭慧如

義守大學/理工學院/材料科學與工程學系/碩士(2022年)

摘要

本研究以溶膠凝膠法製備氧化鋅鎵(ZnGa2O4)薄膜，簡稱ZGO，以前驅物溶液pH值、旋鍍參數、煆燒溫度作為實驗參數，探討結構與其發光性質，並最佳化製備參數，以Cr3+與Mn2+為摻雜離子，改變摻雜濃度與煆燒溫度，探討其摻雜濃度及煆燒溫度變化與放射光波長關係。利用XRD鑑定本實驗所製備薄膜為ZGO結晶相，且以pH=5，轉速4000 rpm，煆燒溫度700 ℃的結晶性為最佳，SEM觀察結果得知所製備出顆粒大小介於20 ~ 30 nm，UV-vis所測得能隙為4.9 eV，霍爾量測結果為P型半導體，其平均載子遷移率為34.1 (cm2/V．s)，未摻雜的ZGO薄膜於紫外燈下觀察為放射藍光而其PL光譜結果顯示來自Ga-O，而Cr3+：ZGO薄膜於紫外燈下具有明顯放射紅光其PL光譜結果顯示以摻雜量2.5 atm %為最佳摻雜量，且放射波長為695 nm其能階躍遷為2E→4A2，Mn2+：ZGO薄膜於紫外燈下具有明顯放射綠光其PL光譜結果顯示以煆燒溫度700 ℃摻雜量1.5 atm %為最佳化參數，其放射波長為504 nm能階躍遷為4T1→6A1。

關鍵字

無

並列摘要

In this study, zinc gallium oxide (ZnGa2O4) thin films, referred to as ZGO for short, were prepared by sol-gel method. Taking Cr3+ and Mn2+ as doping ions, changing the doping concentration and sintering temperature, the relationship between the doping concentration and sintering temperature and the wavelength of the emitted light was discussed. The films prepared in this experiment were identified by XRD as ZGO crystalline phase, and the crystallinity was the best at pH=5, rotating speed 4000 rpm, and sintering temperature 700 ℃. The SEM observation results showed that the prepared particle size was between 20 and 30. nm, the energy gap measured by UV-vis is 4.9 eV, and the Hall measurement result is a P-type semiconductor with an average carrier mobility of 34.1 (cm2/V·s). It is observed that it emits blue light and its PL spectrum results show that it comes from Ga-O, while the Cr3+:ZGO film has obvious red emission under ultraviolet light. The wavelength is 695 nm, and its energy level transition is 2E→4A2. The Mn2+:ZGO film has obvious green emission under ultraviolet light. The PL spectrum results show that the calcination temperature is 700 ℃ and the doping content is 1.5 atm % as the optimal parameter. The emission wavelength is 504 nm and the energy level transition is 4T1→6A1.

並列關鍵字

none

參考文獻

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