摻雜銅對氧化亞銅靶材顯微結構及其性質之影響

The Effects of Cu Doping on Microstructure and Properties of Cu2O Target

葉瑋琳(Wei-Lin Ye)

指導教授 ： 洪博彥

義守大學/理工學院/材料科學與工程學系/碩士(2015年)

https://doi.org/10.6343/ISU.2015.00125

摘要

本研究主要製成氧化亞銅靶材，但是氧化亞銅很容易與氧反應形成氧化銅，故壓錠好的生胚所使用的燒結法都是使用真空或者添加保護氣氛。摻雜不同含量的銅（1wt%、5wt%、10wt%、15wtd%、20wt%）之Cu2O靶材，利用管狀爐或熱壓進行燒結成型，並進行高溫腐蝕，且利用LCR量測其電阻、X-ray繞射進行成分分析、SEM觀察其表面型態。
製備Cu2O薄膜的實驗參數，如Cu摻雜量、燒結溫度、高溫腐蝕溫度，找出最佳的靶材製程條件。
實驗結果顯示，Cu粉末摻雜量的增加影響其結晶結構，10%Cu摻雜的氧化亞銅靶材在燒結溫度1050℃時擁有最低電阻率為5.4×104Ω．cm。燒結溫度比起Cu的摻雜量，更有效影響靶材密度與孔隙率，在燒結溫度1000℃與1050℃時，靶材相對密度達99.99%，視孔隙率只有0.41%，但是熱壓燒結的方式在溫度950℃即可達成。

關鍵字

高溫腐蝕 ； 管狀爐 ； 氧化亞銅

並列摘要

Because of easy reaction with oxygen at ambient atmosphere, Cu2O is formed under vacuum or in a protected atmosphere. In this study, we fabricated dense Cu2O ceramics by mixing Cu2O and Cu powder. The purpose of adding copper powder is to assist the densification of Cu2O by providing viscous flow during sintering processing. The concentration of copper powder is ranged from 1 to 20wt%. The effect of copper concentration on the densification behavior, microstructure and electrical property is investigated.
The results showed that no any CuO phases were formed. The Cu2O ceramic has a lowest electrical resistivity about 5.4×104Ω．cm at 10wt% of copper addition. In addition, the relative density can reach to 99.99% at sintering temperature 1000℃ and 1050℃. The apparent porosity also decreased to 0.41%. Whereas the same performance can be also achieved by hot-pressing process.

並列關鍵字

Hot corrosion ； Tubular furnace ； Cu2O

參考文獻

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