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  • 學位論文

奈米碳管場發射二極體

CARBON NANOTUBES FIELD EMISSION DIODE

指導教授 : 羅吉宗
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摘要


我們用奈米碳管製造了一個完整的場發射二極體。這個元件是用厚膜網印技術設計和製作的在玻璃基板上。在順向電壓100伏特的時候,場發射二極體的電流密度可達到每平方公分180 毫安培。而在1000伏特的逆向偏壓下卻只有10-12安培的洩漏電流。藉由理論計算和實驗結果得知場發射二極體可以在射頻的範圍運作,因為在真空中電子能夠高速穿遂並且內電容非常小,以至於有非常短的逆向恢復時間。良好特性且新穎的場發射二極體是以低成本的網印製程和奈米材料來製造的,而奈米材料可以大大的減小真空微電子元件的尺寸並且在未來提供了他們新的應用機會。

並列摘要


A fully integrated field emission diode (FED) using carbon nanotubes as electron field emitter was constructed. The device was designed and fabricated on a glass substrate by screen-printing thick film technique. The FED was operated at 100 V for giving a forward current density of 180 mA /cm2. A leakage current of 1 pA was measured then a 1000 V reverse voltage was applied, indicating that a high voltage blocking capability was obtained from such a device. From theoretical calculation and experimental results, the FED can be operated in megahertz due to very high speed of electrons traveling through the vacuum gap on forward operation and a small residue capacitance as well as minimum the reverse recovery time on reverse operation. The high performance of the novel FED was fabricated by a cost effective process combined with nanomaterials which opens up a route to produce miniaturized vacuum devices and new applications for such kind of the integrated vacuum microelectronic device.

參考文獻


Chapter 1
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