本篇文章是開發一種新型的結晶方式稱為能量輔助媒介模式可以藉由紅外線照射製作出高度結晶且平坦之多晶矽膜。在這技術其非晶矽與金屬材質做一結合在低熱預算方式下進行退火處理,並以有效率的能量轉換使得成長為高品質多晶矽。經過本文的研究分析,我們得到多晶矽其晶粒平均大小約為0.4μm,表面平均粗糙度約為0.34nm,拉曼分析薄膜擁有對應Si-Si鍵結之(517.8 cm-1)峰值位置信號,同時XRD的分析也證明是有明顯的(111)晶體方向性。在其它方面,我們藉由化學分析電子術進行縱深分析看其結晶薄膜是否有殘留金屬元素問題。
The purpose of this paper is to develop a new crystallization method named as energy-assisted agent (EAA) to make smooth and high quality polycrystalline silicon (poly-Si) film through of infrared ray illumination. In this technique, an amorphous silicon (a-Si) film integrates with metal material subjected too a low thermal budget treatment, a high quality poly-Si can be obtained through an efficient energy transfer. As we studied, the average size of grain was 0.4μm, its surface roughness was about 0.34nm. For Raman spectrum, there is a peak value corresponding to Si-Si bond in crystalline silicon and the result of XRD shows preferential crystal orientation of (111). On the other hand, we conducted ESCA depth analysis on the crystallized film to realize the issue of resided metal atom.