本研究主要是利用陰極電弧(Cathodic arc deposition, CAD)沉積系統,並附加過慮器來改善CAD製程沉積微粒過大之缺點,因TiN、TiAlN、TiCN鍍膜各有其優缺點,且此三種鍍膜也已被廣泛研究討論,因此本實驗同時使用Ti金屬與TiAl合金兩種靶材,通入N2與C2H2氣氛為製程條件,來沈積(Ti,TiAl)N與(Ti,TiAl)CN兩種混合鍍膜,以期得到較三種廣泛研究之鍍膜優異的性質,並與附加Filter效應做比較。 經實驗得知,Filter改善了CAD particle過大之缺點,在表面粗操度、鍍膜附著性與孔隙率有極大的改善,且鍍膜結構不變,又因孔隙率隨particle縮小而減少,在抗蝕性方面有較好的表現,但是particle縮小,使得鍍膜沉積速率降低。
The work investigated to improve the defect of the bigger particle by Cathodic Arc Deposition (CAD) system with filtered. Because the TiN、TiAlN and TiCN coatings are popularly investigated before. Thereby, in this case, use a Ti target and TiAl target moreover N2 and C2H2 gases are through into with the process parameters to deposited (Ti,TiAl)N and (Ti,TiAl)CN two mixed films. They expect to obtain excellent properties besides to compare with filtered effect. Via knew with the experiment, the filter improves the defect of bigger particle, there are best improvement in roughness (Ra)、adhesion and porosity, moreover the structure cannot change. Also because the porosity decrease to improved with the corrosion resistance. But the particle decrease resulted in the decrease of depositing rate.