- 學位論文
添加金、銀於AZO透明導電薄膜中之研究
The Study of AZO Transparent Conducting Thin Films with Au or Ag
摘要
本研究的主要目的是以溶膠凝膠法結合旋轉塗佈技術製備AZO薄膜。第一部分探討Al摻雜量和熱處理溫度對AZO薄膜光電性質的影響。第二部份則添加Au、Ag來改良AZO薄膜的導電性。實驗以醋酸鋅為溶質，乙二醇甲醚為溶劑，加入MEA作為穩定劑，再分別摻雜Al/Zn＝0.3~1.5at%的氯化鋁作為摻雜物，旋鍍成AZO薄膜，再以第一階段550℃、650℃、750℃氬氣下退火，第二階段500℃氫氣(N295%+H25%)還原氣氛下即得AZO薄膜。 其結果由XRD分析發現AZO薄膜有(002)擇優取向，結晶性佳。熱處理溫度、Al摻雜濃度會影響薄膜表面型態。AZO以0.5at%Al摻雜經750℃氬氣下退火1.5小時有最佳結晶性，AZO薄膜可見光穿透率超過90%，得到最低電阻6.79×10-3Ω-cm；而添加金則降低約2個order，最低電阻達1.15×10-4Ω-cm。但可見光穿透率降低到30~60％之間。而添加銀時，薄膜之電阻值降低約4個order，最低電阻達3.10×10-6Ω-cm。但可見光穿透率降至很低。所以由此實驗可以發現，將金或銀均勻的添加在的AZO薄膜內，可以降低AZO薄膜的電阻率，但也同時降低透光度。
關鍵字
AZO透明導電薄膜並列摘要
The goal of this study is to use sol-gel method and spin coating technique to prepare ZnO：Al (AZO) thin films and to study the influence of Al doping concentration and thermal treatment condition on the electro-optical properties of AZO thin films. Au , Ag were also added in hope to improve the optical-electrical properties of AZO thin film. Zinc acetate dihydrate was used as a starting material and 2-Methoxyethanol and monoethanolamine were used as a solvent and a stabilizer, respectively, in this experiment. By adding different amounts (0.3at%~1.5at%) of aluminum nitrate nonahydrate as dopant and with first step annealing at 550℃, 650℃, 750℃ in Ar, then second step annealing at 500℃ in forming gas (N295%+H25%), proper AZO thin films could be obtained. The X-ray diffraction studies revealed AZO thin films have (002) preferred orientation. The best film was obtained when the film was doped with 0.5at% Al and annealing at 750℃ in Ar. The optical transmittance was better than 90 %. A minimum resistivity of 6.79×10-3Ω-cm was achieved. A minimum resistivity of 1.15×10-4Ω-cm and 3.10×10-6 could be obtained when the films was doped with 0.5at% Al and contained Au and Ag films after annealed at 750℃ in Ar. The incorporation of Au and Ag films decreased two and four orders of the resistivity of AZO thin films. However, the optical transmittance was also greatly decreased .