在本研究中成功地利用射頻磁控濺鍍系統(radio-frequency sputtering system)成長出與基板垂直的奈米碳片(carbon nanoflakes),與以往CVD系統成長奈米碳片做比較,本實驗所使用的功率以及溫度較低(400 ℃, 75 W)。奈米碳片的厚度約為5-10 nm,其表面形態類似多孔隙材料。經過連續的沉積時間以及改變不同成分的製程氣體,並藉由SEM、TEM、Raman、拉曼光譜、I-V場發射特性量測,從中研究奈米碳片的成長機制與結構。 由於具有較好的高寬比以及鋒利的邊緣,相當適合作為場發射源,最終找出以氬氣混合氫氣之下成長40分鐘的奈米碳片具有最佳的場發射特性,當電流密度達1 µA/cm2的起始電場為5.6 V/µm,而電場達到10 V/µm其電流密度可達到1 mA/cm2。
In this study, we fabricated the carbon nanoflakes (CNFs) by radio-frequency sputtering system. We successfully grow CNFs by physics vapor deposition with low temperature (400 ℃) and low R.F. power (75W). Lots of CNFs with a thickness of less than 5-10 nm interlaced together to form a layer of carbon nest-like film with their sharp edges perpendicular to the silicon substrate. The effects of deposition parameters on the structure and properties of CNFs were also investigated. A growth mechanism has been proposed that observed structure of these CNFs resulting from the interaction of processing time and different growth gas. From the application points of view, the free-standing and vertically oriented CNFs with a very high aspect ratio and sharp edges could serve as an efficient edge emitter for electron field emission. Under the diode structure condition, the anode and the cathode gap of 100 μm, the turn-on electric field of the CNFs is 5.6 V/μm while reached 1 μA/cm2 and electric current density reached 1 mA/cm2 under 10 V/μm.