利用射頻磁控濺鍍法沉積奈米碳片及其在電子場發射特性研究

Depositing the Carbon Nanoflakes by RF Magnetron Sputtering for Electron Field Emission Application

陳維耀(Wei-Yao Chen)

指導教授 ： 施文欽

大同大學/電機資訊學院/光電工程研究所/碩士(2012年)

摘要

本研究中使用射頻磁控濺鍍系統將奈米碳片沉積於矽晶片上。奈米碳片厚度約為50 nm，其表面形態類似多孔隙之材料。經過連續的沉積時間以及改變不同溫度和功率，並藉由SEM、Raman以及I-V場發射特性量測，找出最好的場發射特性。
在奈米碳片製程研究中我們發現具有較好的高寬比以及鋒利的邊緣，相當適合作為場發射源，實驗使用氬氣混合氫氣之下沉積60分鐘的奈米碳片，其具有最佳的場發射特性，場發射裝置的陽極與陰極間距約為125 μm，當電流密度達1 μA/cm2的起始電場為2.36 V/μm，而電場達到4.92 V/μm其電流密度可達到2 mA/cm2。

關鍵字

奈米碳片 ； 射頻磁控濺鍍法 ； 電子場發射特性

並列摘要

In this study, we fabricated the carbon nanoflakes (CNFs) on silicon substrate by radio-frequency magnetron sputtering system. Lots of CNFs with thickness of less than 50 nm interlaced together to form a layer of carbon nest-like film with their sharp edges perpendicular to the substrate. The effects of deposition parameters on the structure and properties of CNFs were also investigated. A growth mechanism has been proposed that observed structure of these CNFs resulting from the temperature、RF power and different growth time. From the application points of view, the free-standing and vertically oriented CNFs with a very high aspect ratio and sharp edges could serve as an efficient edge emitter for electron field emission. For the diode structure, the gap between anode and cathode is 125 μm, and the turn-on electric field can reach to 2.36 V/μm while current density is 1 μA/cm2. The current density can reach to 2 mA/cm2 under 4.92 V/μm.

並列關鍵字

Carbon Nanoflakes ； RF Magnetron Sputtering ； Electron Field Emission

參考文獻

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