Growth and characterization of Zn Mn(subscript x)Se epilayers and ZnSe/Zn Mn(subscript x)Se quantum wells

硒化錳鋅磊晶層及矽化鋅/硒化錳鋅量子井的成長與量測

周武清(W.C. Chou) ； 楊祝壽(C.S. Yang) ； 樂錦盛(C.S. Ro) ； 藍國瑛(K.Y. Lan) ； 黃振忠(C.C. Huang) ； 陳棟民(T.M. Chen)

《中原學報》 26卷3期 (1998/08) Pp. 1-7

https://doi.org/10.6358/JCYU.199808.0001

摘要

利用分子束磊晶法成長哂化鎰鋅磊晶層及哂化鋅／猶化錳鋅量子井結構，長晶情況被反射式高能量電子燒射所監控。利用反射及光激螢光量測能隙邊緣的激子躍遷。縱向和橫向光學聲子能量是用拉曼散射和紅外線反射量測所獲得的。另外穿透式電子顯微術被用來觀察界面的雅積缺陷及測定長晶速率。

關鍵字

磊晶層 ； 量子井 ； 分子東磊晶 ； 反射 ； 光激螢光 ； 縱向光學聲子 ； 拉曼散射 ； 穿透式電子顯微術 ； 堆積缺陷

並列摘要

Zn(subscript 1-x)Mn(subscript x)Se epilayers and ZnSe/ Zn(subscript 1-x) Mn(subscript x)Se quantum well structures were grown by molecular beam epitaxy. The growth was monitored by the reflection high energy electron diffraction. The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements. The longitudinal and transverse optical phonon energies were obtained by the Raman scattering and the far infrared reflectivity measurement. In addition, transmission electron microscopy was used to investigate the interfacial stacking faults and to characterize the growth rate.

並列關鍵字

epilayer ； quantum well ； molecular beam epitaxy ； reflectivity ； photoluminescence ； longitudinal optical phonon ； Raman scattering ； transmission electron microscopy ； stacking faults.