氮化鋁奈米線的製備與光學性質

Growth and Optical Property of AlN Nanowires

梁兆宇(J. Y. Liang) ； 吳慧敏(H. M. Wu)

《華岡工程學報》 23期 (2009/01) Pp. 185-188

https://doi.org/10.29987/CCUHKJE.200901.0023

摘要

本研究中，使用AP-CVD方法，成長一維氮化鋁奈米線。藉由Ni的催化反應可在sapphire基板成長出大面積的氮化鋁奈米線，直徑約50-70nm，長度約10-30μm。並由溫度(1200℃-1400℃)的調變，觀察其結構變化，以及氮化鋁奈米線的光學性質。其中，我們使用SEM觀察樣品形貌，Raman光譜儀與X-ray繞射儀，進行結構分析。在光學性質分析中，我們利用SEM電子束激發氮化鋁奈米線，以觀察其陰極發光(Cathodoluminescence, CL)，此外並採用氙燈分析光致發光(Photoluminescence, PL)及吸收光譜(Photoluminescence excitation, PLE)。氮化鋁奈米線於常溫(300K)下就能測到6.12eV的峰值，與理論值6.2eV僅有些許的偏移，說明了本實驗樣品品質有重大的突破，也顯示氮化鋁奈米線具有發展UV-LED的潛力。

關鍵字

氮化鋁奈米線 ； 光學性質 ； 化學氣相沉積

並列摘要

We have investigated the growth structure and their optical properties of Wurzite AlN nanowires grown on sapphire (0002) substrates by chemical vapor deposition at various temperatures. The morphology, and structure were characterized by scanning and transmission electron microscopy, X-ray diffraction, and Raman analysis. Blue shift to shorter wavelength was observed in Raman spectrum when reaction temperature was increased. Emission characteristics were slightly altered by temperature effect due to defects of impurities and vacancies introduced during chemical reactions. Band to band excitonic feature at 6.12eV at room temperature was first reported in this study by the methods of optical measurements of cathodoluminescence, and photoluminescence. Two defect related transmissions around 2.95eV and 4.85eV were also observed as well, and a band gap structure of AlN nanowires was suggested in this report.

並列關鍵字

aluminum nitride nanowire ； optical property ； chemical vapor deposition