氧化鋁奈米線之製備及其性質之研究

本研究是利用電化學的方式來製備氧化鋁奈米線及其特性之研究，在製備過程中，將基板先置於電解溶液，施加直流高電壓以陽極氧化，使鋁基板表面上生成一層具有奈米孔洞之陽極氧化鋁(AAO)膜。再置於浸蝕溶液中，進行化學蝕刻，最後可得到氧化鋁奈米線。影響氧化鋁奈米線生長之參數包括陽極氧化次數、陽極氧化溶液濃度、陽極氧化溶液溫度、陽極氧化電壓、陽極氧化時間、鋁基材退火溫度、鋁基材退火持溫時間、浸蝕液濃度、浸蝕液溫度及浸蝕時間等，可藉由田口法找尋最佳參數，獲得製備氧化鋁奈米線之最佳製程，並探討其生長的機制與光致發光特性研究。最後在確認實驗證實，鋁基材之退火溫度400℃持溫5個小時後，在0.317M(~0℃)草酸溶液中陽極氧化兩次3個小時後，在2M(~20℃)磷酸中浸蝕75分鐘，為製備氧化鋁奈米線最佳參數。氧化鋁奈米線在紫外線(UV)雷射(波長325nm)激發下所發射出之光譜，光譜具有440nm(藍光)最強的發光特性。

關鍵字

氧化鋁奈米線；電化學法；光致發光；藍光

並列摘要

This research is to prepare alumina nanowires by electrochemical method and to study the characteristic of these alumina nanowires. In the preparation process, the Al substrate was first put in electrolysis solution and to be anodized by a direct current power supply for the growth of anodic alumina membrane with nanosized pores, and then put in an acid solution for electrochemically etching. The parameter influence the growth of alumina nanowires include: number of anodizing treatment, concentration of anodizing solution, temperature of anodizing solution, voltage of anodizing treatment, anodizing time, annealing temperature for Al substrate, annealing time, concentration of etching solution, temperature of etching solution, and etching time. Taguchi method was used to obtain the optimum condition for better yield. The growth mechanism of alumina nanowire and characteristic of photoluminescence were discussed. Finally a verification experiment was performed. The result showed that the optimum condition is: number of anodizing treatment : 2, concentration of anodizing: 0.3M, temperature of anodizing : 0,voltage of anodizing treatment: 70V, anodizing time: 3 hours,annealing temperature for Al substrate: 400,annealing time for Al substrate: 5 hours, concentration of etching solution: 3M, temperature of etching solution: 20,etching time:75min. The alumina nanowires have strong photoluminescence peak at 440nm (blue color) by Ultraviolet (UV) laser(wavelength=325 nm) excitation.